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CY7C1484V33-200BZI PDF预览

CY7C1484V33-200BZI

更新时间: 2024-09-19 05:19:43
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器时钟
页数 文件大小 规格书
26页 1152K
描述
72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM

CY7C1484V33-200BZI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:15 X 17 MM, 1.40 MM HEIGHT, FBGA-165针数:165
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.92
Is Samacsys:N最长访问时间:3 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):200 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
JESD-609代码:e0长度:17 mm
内存密度:75497472 bit内存集成电路类型:CACHE SRAM
内存宽度:36湿度敏感等级:3
功能数量:1端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2MX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装等效代码:BGA165,11X15,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):220
电源:2.5/3.3,3.3 V认证状态:Not Qualified
座面最大高度:1.4 mm最小待机电流:3.14 V
子类别:SRAMs最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15 mmBase Number Matches:1

CY7C1484V33-200BZI 数据手册

 浏览型号CY7C1484V33-200BZI的Datasheet PDF文件第2页浏览型号CY7C1484V33-200BZI的Datasheet PDF文件第3页浏览型号CY7C1484V33-200BZI的Datasheet PDF文件第4页浏览型号CY7C1484V33-200BZI的Datasheet PDF文件第5页浏览型号CY7C1484V33-200BZI的Datasheet PDF文件第6页浏览型号CY7C1484V33-200BZI的Datasheet PDF文件第7页 
CY7C1484V33  
CY7C1485V33  
72-Mbit (2M x 36/4M x 18) Pipelined  
DCD Sync SRAM  
Features  
Functional Description[1]  
• Supports bus operation up to 250 MHz  
The CY7C1484V33/CY7C1485V33 SRAM integrates 2M x  
36/4M x 18 SRAM cells with advanced synchronous  
peripheral circuitry and a two-bit counter for internal burst  
operation. All synchronous inputs are gated by registers  
controlled by a positive-edge-triggered Clock Input (CLK). The  
synchronous inputs include all addresses, all data inputs,  
address-pipelining Chip Enable (CE1), depth-expansion Chip  
Enables (CE2 and CE3), Burst Control inputs (ADSC, ADSP,  
and ADV), Write Enables (BWX, and BWE), and Global Write  
(GW). Asynchronous inputs include the Output Enable (OE)  
and the ZZ pin.  
• Available speed grades are 250, 200, and 167 MHz  
• Registered inputs and outputs for pipelined operation  
• Optimal for performance (double cycle deselect)  
• Depth expansion without wait state  
• 3.3V core power supply (VDD  
• 2.5V/3.3V IO operation  
)
• Fast clock-to-output times  
— 3.0 ns (for 250 MHz device)  
Addresses and chip enables are registered at rising edge of  
clock when either Address Strobe Processor (ADSP) or  
• Provide high performance 3-1-1-1 access rate  
• User selectable burst counter supporting Intel®  
Address Strobe Controller (  
burst addresses can be internally generated as controlled by  
) are active. Subsequent  
ADSC  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self timed writes  
the Advance pin (ADV).  
Address, data inputs, and write controls are registered on-chip  
to initiate a self timed write cycle. This part supports byte write  
operations (see “Pin Definitions” on page 5 and “Truth Table”  
on page 8 for further details). Write cycles can be one to four  
bytes wide as controlled by the byte write control inputs. GW  
active LOW causes all bytes to be written. This device incor-  
porates an additional pipelined enable register which delays  
turning off the output buffers an additional cycle when a  
deselect is executed.This feature enables depth expansion  
without penalizing system performance.  
• Asynchronous output enable  
• CY7C1484V33, CY7C1485V33 available in  
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and  
non-Pb-free 165-ball FBGA package  
• IEEE 1149.1 JTAG-Compatible Boundary Scan  
• “ZZ” Sleep Mode option  
The CY7C1484V33/CY7C1485V33 operates from a +3.3V  
core power supply while all outputs operate with a +3.3V or a  
+2.5V supply. All inputs and outputs are JEDEC-standard  
JESD8-5-compatible.  
Selection Guide  
250 MHz  
200 MHz  
3.0  
167 MHz  
3.4  
Unit  
ns  
Maximum Access Time  
3.0  
500  
120  
Maximum Operating Current  
Maximum CMOS Standby Current  
500  
450  
mA  
mA  
120  
120  
Note  
1. For best practices recommendations, please refer to the Cypress application note AN1064, SRAM System Guidelines.  
Cypress Semiconductor Corporation  
Document #: 38-05285 Rev. *G  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised May 01, 2007  
[+] Feedback  

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