Datasheet > CY7C1485V25-250BZXI

CY7C1485V25-250BZXI

更新时间： 2024-09-19 05:19:43

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
26页	1149K
描述
72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM

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CY7C1484V25

CY7C1485V25

72-Mbit (2M x 36/4M x 18) Pipelined

DCD Sync SRAM

Features

Functional Description^[1]

• Supports bus operation up to 250 MHz

The CY7C1484V25/CY7C1485V25 SRAM integrates 2M x

36/4M x 18 SRAM cells with advanced synchronous

peripheral circuitry and a two-bit counter for internal burst

operation. All synchronous inputs are gated by registers

controlled by a positive-edge-triggered Clock Input (CLK). The

synchronous inputs include all addresses, all data inputs,

address-pipelining Chip Enable (CE₁), depth-expansion Chip

Enables (CE₂and CE₃), Burst Control inputs (ADSC, ADSP,

and ADV), Write Enables (BW_Xand BWE), and Global Write

(GW). Asynchronous inputs include the Output Enable (OE)

and the ZZ pin.

• Available speed grades are 250, 200, and 167 MHz

• Registered inputs and outputs for pipelined operation

• Optimal for performance (double cycle deselect)

• Depth expansion without wait state

• 2.5V core power supply (V_DD

)

• 2.5V/1.8V IO supply (V_DDQ

)

• Fast clock-to-output times

— 3.0 ns (for 250-MHz device)

Addresses and chip enables are registered at the rising edge

of clock when either Address Strobe Processor (ADSP) or

Address Strobe Controller (ADSC) are active. Subsequent

burst addresses can be internally generated as controlled by

the Advance pin (ADV).

• Provide high performance 3-1-1-1 access rate

• User selectable burst counter supporting Intel^®

Pentium^®interleaved or linear burst sequences

• Separate processor and controller address strobes

• Synchronous self timed writes

Address, data inputs, and write controls are registered on-chip

to initiate a self timed write cycle. This part supports byte write

operations (see “Pin Definitions” on page 5 and “Truth Table”

on page 8 for further details). Write cycles can be one to four

bytes wide, as controlled by the byte write control inputs. GW

active LOW causes all bytes to be written. This device incor-

porates an additional pipelined enable register, which delays

turning off the output buffers an additional cycle when a

deselect is executed. This feature allows depth expansion

without penalizing system performance.

• Asynchronous output enable

• CY7C1484V25, CY7C1485V25 available in JEDEC-

standard Pb-free 100-pin TQFP, Pb-free and non-Pb-free

165-ball FBGA package

• IEEE 1149.1 JTAG-Compatible Boundary Scan

• “ZZ” Sleep Mode option

The CY7C1484V25/CY7C1485V25 operates from a +2.5V

core power supply while all outputs operate with a +2.5V or a

+1.8V supply. All inputs and outputs are JEDEC-standard

JESD8-5-compatible.

Selection Guide

250 MHz

200 MHz

3.0

167 MHz

3.4

Unit

Maximum Access Time

3.0

450

120

Maximum Operating Current

Maximum CMOS Standby Current

450

400

120

Note

1. For best practices recommendations, please refer to the Cypress application note AN1064, SRAM System Guidelines.

Cypress Semiconductor Corporation

Document #: 38-05286 Rev. *H

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised April 24, 2007

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与CY7C1485V25-250BZXI相关器件

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CY7C1485V33-167AXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM
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CY7C1485V33-167BZI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM
CY7C1485V33-167BZXC	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM
CY7C1485V33-167BZXI	CYPRESS	获取价格	72-Mbit (2M x 36/4M x 18) Pipelined DCD Sync SRAM
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