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CY7C1472BV25-200AXCT PDF预览

CY7C1472BV25-200AXCT

更新时间: 2024-09-18 15:17:03
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
29页 893K
描述
Synchronous SRAM

CY7C1472BV25-200AXCT 数据手册

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CY7C1470BV25  
CY7C1472BV25  
72-Mbit (2M × 36/4M × 18)  
Pipelined SRAM with NoBL™ Architecture  
72-Mbit (2M  
× 36/4M × 18) Pipelined SRAM with NoBL™ Architecture  
Features  
Functional Description  
Pin-compatible and functionally equivalent to ZBT™  
The CY7C1470BV25 and CY7C1472BV25 are 2.5 V,  
2M × 36/4M × 18 synchronous pipelined burst SRAMs with No  
Bus Latency™ (NoBL™) logic, respectively. They are designed  
to support unlimited true back-to-back read or write operations  
with no wait states. The CY7C1470BV25 and CY7C1472BV25  
are equipped with the advanced (NoBL) logic required to enable  
consecutive read or write operations with data being transferred  
on every clock cycle. This feature dramatically improves the  
throughput of data in systems that require frequent read or write  
transitions. The CY7C1470BV25 and CY7C1472BV25 are  
pin-compatible and functionally equivalent to ZBT devices.  
Supports 250 MHz bus operations with zero wait states  
Available speed grades are 250, 200, and 167 MHz  
Internally self-timed output buffer control to eliminate the need  
to use asynchronous OE  
Fully registered (inputs and outputs) for pipelined operation  
Byte Write capability  
Single 2.5 V power supply  
All synchronous inputs pass through input registers controlled by  
the rising edge of the clock. All data outputs pass through output  
registers controlled by the rising edge of the clock. The clock  
input is qualified by the Clock Enable (CEN) signal, which when  
deasserted suspends operation and extends the previous clock  
cycle. Write operations are controlled by the Byte Write Selects  
(BWa–BWd for CY7C1470BV25 and BWa–BWb for  
CY7C1472BV25) and a Write Enable (WE) input. All writes are  
conducted with on-chip synchronous self-timed write circuitry.  
2.5 V I/O supply (VDDQ  
)
Fast clock-to-output times  
3.0 ns (for 250-MHz device)  
Clock Enable (CEN) pin to suspend operation  
Synchronous self-timed writes  
CY7C1470BV25 available in JEDEC-standard Pb-free 100-pin  
TQFP and Pb-free 165-ball FBGA package. CY7C1472BV25  
available in JEDEC-standard Pb-free 100-pin TQFP  
Three synchronous Chip Enables (CE1, CE2, CE3) and an  
asynchronous Output Enable (OE) provide for easy bank  
selection and output tri-state control. To avoid bus contention,  
the output drivers are synchronously tri-stated during the data  
portion of a write sequence.  
IEEE 1149.1 JTAG Boundary Scan compatible  
Burst capability – linear or interleaved burst order  
“ZZ” Sleep Mode option and Stop Clock option  
For a complete list of related documentation, click here.  
Selection Guide  
Description  
Maximum Access Time  
250 MHz  
3.0  
200 MHz  
3.0  
167 MHz Unit  
3.4  
400  
120  
ns  
Maximum Operating Current  
450  
450  
mA  
mA  
Maximum CMOS Standby Current  
120  
120  
Cypress Semiconductor Corporation  
Document Number: 001-15032 Rev. *O  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised February 7, 2018  

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