CY7C1470BV33
CY7C1472BV33, CY7C1474BV33
72-Mbit (2M x 36/4M x 18/1M x 72)
Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1470BV33, CY7C1472BV33, and CY7C1474BV33
are 3.3V, 2M x 36/4M x 18/1M x 72 Synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL™) logic, respectively.
They are designed to support unlimited true back-to-back read
or write operations with no wait states. The CY7C1470BV33,
CY7C1472BV33, and CY7C1474BV33 are equipped with the
advanced (NoBL) logic required to enable consecutive read or
write operations with data being transferred on every clock cycle.
This feature dramatically improves the throughput of data in
systems that require frequent read or write transitions. The
CY7C1470BV33, CY7C1472BV33, and CY7C1474BV33 are pin
compatible and functionally equivalent to ZBT devices.
■ Pin-compatible and functionally equivalent to ZBT™
■ Supports 250 MHz bus operations with zero wait states
❐ Available speed grades are 250, 200, and 167 MHz
■ Internally self-timed output buffer control to eliminate the need
to use asynchronous OE
■ Fully registered (inputs and outputs) for pipelined operation
■ Byte Write capability
■ Single 3.3V power supply
■ 3.3V/2.5V IO power supply
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the Clock Enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
■ Fast clock-to-output time
❐ 3.0 ns (for 250-MHz device)
■ Clock Enable (CEN) pin to suspend operation
■ Synchronous self-timed writes
Write operations are controlled by the Byte Write Selects
■ CY7C1470BV33, CY7C1472BV33 available in
(BWa–BWd
for
CY7C1470BV33,
BWa–BWb
for
JEDEC-standard Pb-free 100-pin TQFP, Pb-free and
non-Pb-free 165-ball FBGA package. CY7C1474BV33
available in Pb-free and non-Pb-free 209-ball FBGA package
CY7C1472BV33, and BWa–BWh for CY7C1474BV33) and a
Write Enable (WE) input. All writes are conducted with on-chip
synchronous self-timed write circuitry.
■ IEEE 1149.1 JTAG Boundary Scan compatible
■ Burst capability—linear or interleaved burst order
■ “ZZ” Sleep Mode option and Stop Clock option
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
Description
Maximum Access Time
250 MHz
200 MHz
3.0
167 MHz
3.4
Unit
ns
3.0
500
120
Maximum Operating Current
500
450
mA
mA
Maximum CMOS Standby Current
120
120
Cypress Semiconductor Corporation
Document #: 001-15031 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 29, 2008
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