Datasheet > CY7C1416BV18-278BZI

CY7C1416BV18-278BZI

更新时间： 2024-09-15 05:19:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	1160K
描述
36-Mbit DDR-II SRAM 2-Word Burst Architecture

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CY7C1416BV18

CY7C1427BV18

CY7C1418BV18

CY7C1420BV18

PRELIMINARY

36-Mbit DDR-II SRAM 2-Word Burst

Architecture

Features

Functional Description

• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

• 300-MHz clock for high bandwidth

The CY7C1416BV18, CY7C1427BV18, CY7C1418BV18 and

CY7C1420BV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II architecture. The DDR-II consists of an

SRAM core with advanced synchronous peripheral circuitry

and a 1-bit burst counter. Addresses for Read and Write are

latched on alternate rising edges of the input (K) clock. Write

data is registered on the rising edges of both K and K. Read

data is driven on the rising edges of C and C if provided, or on

the rising edge of K and K if C/C are not provided. Each

address location is associated with two 8-bit words in the case

of CY7C1416BV18 and two 9-bit words in the case of

CY7C1427BV18 that burst sequentially into or out of the

device. The burst counter always starts with a “0” internally in

the case of CY7C1416BV18 and CY7C1427BV18. On

CY7C1418BV18 and CY7C1420BV18, the burst counter

takes in the least significant bit of the external address and

bursts two 18-bit words in the case of CY7C1418BV18 and two

36-bit words in the case of CY7C1420BV18 sequentially into

or out of the device.

• 2-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz for DDR-II

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• DDR-II operates with 1.5 cycle read latency when DLL

is enabled

• Operates like a DDR I device with 1 cycle read latency

in DLL off mode

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR SRAM in

the system design. Output data clocks (C/C) enable maximum

system clocking and data synchronization flexibility.

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both in lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

• Delay Lock Loop (DLL) for accurate data placement

Configurations

CY7C1416BV18 – 4M x 8

CY7C1427BV18 – 4M x 9

CY7C1418BV18 – 2M x 18

CY7C1420BV18 – 1M x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

278

775

Maximum Operating Current (DDR-II)

825

700

600

500

Cypress Semiconductor Corporation

Document Number: 001-07033 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 20, 2006

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与CY7C1416BV18-278BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1416BV18-278BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18-278BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18-300BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18-300BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18-300BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416BV18-300BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture

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