Datasheet > CY7C1416BV18-300BZXC

CY7C1416BV18-300BZXC

更新时间： 2024-11-01 05:19:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器双倍数据速率
页数	文件大小	规格书
28页	1160K
描述
36-Mbit DDR-II SRAM 2-Word Burst Architecture

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技术参数
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CY7C1416BV18-300BZXC 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA, BGA165,11X15,40	针数：	165
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	0.45 ns	其他特性：	PIPELINED ARCHITECTURE
最大时钟频率 (fCLK)：	300 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B165	JESD-609代码：	e1
长度：	17 mm	内存密度：	33554432 bit
内存集成电路类型：	DDR SRAM	内存宽度：	8
湿度敏感等级：	3	功能数量：	1
端子数量：	165	字数：	4194304 words
字数代码：	4000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	4MX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LBGA
封装等效代码：	BGA165,11X15,40	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	电源：	1.5/1.8,1.8 V
认证状态：	Not Qualified	座面最大高度：	1.4 mm
最大待机电流：	0.27 A	最小待机电流：	1.7 V
子类别：	SRAMs	最大压摆率：	0.825 mA
最大供电电压 (Vsup)：	1.9 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	20	宽度：	15 mm

CY7C1416BV18-300BZXC 数据手册

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CY7C1416BV18

CY7C1427BV18

CY7C1418BV18

CY7C1420BV18

PRELIMINARY

36-Mbit DDR-II SRAM 2-Word Burst

Architecture

Features

Functional Description

• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

• 300-MHz clock for high bandwidth

The CY7C1416BV18, CY7C1427BV18, CY7C1418BV18 and

CY7C1420BV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II architecture. The DDR-II consists of an

SRAM core with advanced synchronous peripheral circuitry

and a 1-bit burst counter. Addresses for Read and Write are

latched on alternate rising edges of the input (K) clock. Write

data is registered on the rising edges of both K and K. Read

data is driven on the rising edges of C and C if provided, or on

the rising edge of K and K if C/C are not provided. Each

address location is associated with two 8-bit words in the case

of CY7C1416BV18 and two 9-bit words in the case of

CY7C1427BV18 that burst sequentially into or out of the

device. The burst counter always starts with a “0” internally in

the case of CY7C1416BV18 and CY7C1427BV18. On

CY7C1418BV18 and CY7C1420BV18, the burst counter

takes in the least significant bit of the external address and

bursts two 18-bit words in the case of CY7C1418BV18 and two

36-bit words in the case of CY7C1420BV18 sequentially into

or out of the device.

• 2-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz for DDR-II

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• DDR-II operates with 1.5 cycle read latency when DLL

is enabled

• Operates like a DDR I device with 1 cycle read latency

in DLL off mode

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR SRAM in

the system design. Output data clocks (C/C) enable maximum

system clocking and data synchronization flexibility.

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both in lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

• Delay Lock Loop (DLL) for accurate data placement

Configurations

CY7C1416BV18 – 4M x 8

CY7C1427BV18 – 4M x 9

CY7C1418BV18 – 2M x 18

CY7C1420BV18 – 1M x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

278

775

Maximum Operating Current (DDR-II)

825

700

600

500

Cypress Semiconductor Corporation

Document Number: 001-07033 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 20, 2006

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与CY7C1416BV18-300BZXC相关器件

型号	品牌	获取价格	描述	数据表
CY7C1416BV18-300BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416JV18-300BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1416KV18	CYPRESS	获取价格	36-Mbit DDR II SRAM 2-Word Burst Architecture
CY7C1417AV18	CYPRESS	获取价格	RAM9 QDR-I/DDR-I/QDR-II/DDR- II Errata
CY7C1417AV18-250BZC	CYPRESS	获取价格	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1417AV18-250BZI	CYPRESS	获取价格	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

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