Datasheet > CY7C1417AV18-250BZI

CY7C1417AV18-250BZI

更新时间： 2023-01-03 05:51:54

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		双倍数据速率静态存储器
页数	文件大小	规格书
28页	467K
描述
DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY7C1417AV18-250BZI 数据手册

浏览型号CY7C1417AV18-250BZI的Datasheet PDF文件第2页

浏览型号CY7C1417AV18-250BZI的Datasheet PDF文件第3页

浏览型号CY7C1417AV18-250BZI的Datasheet PDF文件第4页

浏览型号CY7C1417AV18-250BZI的Datasheet PDF文件第5页

浏览型号CY7C1417AV18-250BZI的Datasheet PDF文件第6页

CY7C1417AV18

CY7C1428AV18

CY7C1419AV18

CY7C1421AV18

36-Mbit DDR-II SRAM 4-Word Burst

Architecture

Features

Functional Description

• 36-Mbit density (4M x 8, 4M x 9, 2M x 18, 1M x 36)

• 300-MHz clock for high bandwidth

The CY7C1417AV18, CY7C1428AV18, CY7C1419AV18 and

CY7C1421AV18 are 1.8V Synchronous Pipelined SRAM

equipped with DDR-II (Double Data Rate) architecture. The

DDR-II consists of an SRAM core with advanced synchronous

peripheral circuitry and a two-bit burst counter. Addresses for

Read and Write are latched on alternate rising edges of the

input (K) clock. Write data is registered on the rising edges of

both K and K. Read data is driven on the rising edges of C and

C if provided, or on the rising edge of K and K if C/C are not

provided. Each address location is associated with four 8-bit

words in the case of CY7C1417AV18 and four 9-bit words in

the case of CY7C1428AV18 that burst sequentially into or out

of the device. The burst counter always starts with “00” inter-

nally in the case of CY7C1417AV18 and CY7C1428AV18. On

CY7C1419AV18 and CY7C1421AV18, the burst counter takes

in the last two significant bits of the external address and

bursts four 18-bit words in the case of CY7C1419AV18, and

four 36-bit words in the case of CY7C1421AV18, sequentially

into or out of the device.

• 4-Word burst for reducing address bus frequency

• Double Data Rate (DDR) interfaces

(data transferred at 600 MHz) @ 300 MHz

• Two input clocks (K and K) for precise DDR timing

— SRAM uses rising edges only

• Two input clocks for output data (C and C) to minimize

clock-skew and flight-time mismatches

• Echo clocks (CQ and CQ) simplify data capture in

high-speed systems

• Synchronous internally self-timed writes

• 1.8V core power supply with HSTL inputs and outputs

• Variable drive HSTL output buffers

• Expanded HSTL output voltage (1.4V–V_DD

)

Asynchronous inputs include output impedance matching

input (ZQ). Synchronous data outputs (Q, sharing the same

physical pins as the data inputs, D) are tightly matched to the

two output echo clocks CQ/CQ, eliminating the need for

separately capturing data from each individual DDR-II SRAM

in the system design. Output data clocks (C/C) enable

maximum system clocking and data synchronization flexibility.

• Available in 165-ball FBGA package (15 x 17 x 1.4 mm)

• Offered in both lead-free and non lead-free packages

• JTAG 1149.1 compatible test access port

• Delay Lock Loop (DLL) for accurate data placement

Configurations

All synchronous inputs pass through input registers controlled

by the K or K input clocks. All data outputs pass through output

registers controlled by the C or C (or K or K in a single clock

domain) input clocks. Writes are conducted with on-chip

synchronous self-timed write circuitry.

CY7C1417AV18 – 4M x 8

CY7C1428AV18 – 4M x 9

CY7C1419AV18 – 2M x 18

CY7C1421AV18 – 1M x 36

Selection Guide

300 MHz

300

278 MHz

250 MHz

250

200 MHz

200

167 MHz

167

Unit

MHz

Maximum Operating Frequency

Maximum Operating Current

278

775

825

700

600

500

Cypress Semiconductor Corporation

Document Number: 38-05618 Rev. *E

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised September 25, 2006

12 3 4 5 6 7...28

中文翻译

下载PDF

与CY7C1417AV18-250BZI相关器件

型号	品牌	获取价格	描述	数据表
CY7C1417AV18-250BZXI	CYPRESS	获取价格	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA
CY7C1417AV18-278BZXC	CYPRESS	获取价格	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA
CY7C1417AV18-300BZC	CYPRESS	获取价格	DDR SRAM, 4MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
CY7C1418AV18	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418AV18-167BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418AV18-167BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418AV18-167BZXC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418AV18-167BZXI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418AV18-200BZC	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1418AV18-200BZI	CYPRESS	获取价格	36-Mbit DDR-II SRAM 2-Word Burst Architecture

与CY7C1417AV18-250BZI相关文章

NE5532P芯片资料：引脚说明、电气参数及替换型号推荐
2024-06-13

2
解读MMBT5401数据手册：电气参数及替换型号推荐
2024-06-13

3
深入解读BAV70数据手册：特性、电气参数及替换型号推荐
2024-06-13

4
74HC595D芯片引脚图及功能、参数介绍、替代型号推荐
2024-06-13

4

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1417AV18-250BZI

CY7C1417AV18-250BZI 数据手册

与CY7C1417AV18-250BZI相关器件

与CY7C1417AV18-250BZI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

CY7C1417AV18-250BZI

CY7C1417AV18-250BZI 数据手册

与CY7C1417AV18-250BZI相关器件

与CY7C1417AV18-250BZI相关文章

您还可以找

您在本页遇到什么问题？