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CY7C1399L-15ZC PDF预览

CY7C1399L-15ZC

更新时间: 2024-11-23 22:25:39
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
8页 237K
描述
32K x 8 3.3V Static RAM

CY7C1399L-15ZC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP包装说明:TSOP1-28
针数:28Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.28最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G28
JESD-609代码:e0长度:11.8 mm
内存密度:262144 bit内存集成电路类型:CACHE SRAM
内存宽度:8湿度敏感等级:3
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP28,.53,22
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm最大待机电流:0.00002 A
最小待机电流:2 V子类别:SRAMs
最大压摆率:0.055 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:8 mmBase Number Matches:1

CY7C1399L-15ZC 数据手册

 浏览型号CY7C1399L-15ZC的Datasheet PDF文件第2页浏览型号CY7C1399L-15ZC的Datasheet PDF文件第3页浏览型号CY7C1399L-15ZC的Datasheet PDF文件第4页浏览型号CY7C1399L-15ZC的Datasheet PDF文件第5页浏览型号CY7C1399L-15ZC的Datasheet PDF文件第6页浏览型号CY7C1399L-15ZC的Datasheet PDF文件第7页 
CY7C1399  
32K x 8 3.3V Static RAM  
is provided by an active LOW Chip Enable (CE) and active  
LOW Output Enable (OE) and three-state drivers. The device  
has an automatic power-down feature, reducing the power  
consumption by more than 95% when deselected.  
Features  
• Single 3.3V power supply  
• Ideal for low-voltage cache memory applications  
• High speed  
An active LOW Write Enable signal (WE) controls the writing/  
reading operation of the memory. When CE and WE inputs  
— 12/15 ns  
are both LOW, data on the eight data input/output pins (I/O  
0
• Low active power  
through I/O ) is written into the memory location addressed by  
7
— 255 mW (max.)  
the address present on the address pins (A through A ).  
0
14  
Reading the device is accomplished by selecting the device  
and enabling the outputs, CE and OE active LOW, while WE  
remains inactive or HIGH. Under these conditions, the con-  
tents of the location addressed by the information on address  
pins is present on the eight data input/output pins.  
• Low CMOS standby power (L)  
180 W (max.), f=f  
µ
MAX  
• 2.0V data retention (L)  
40  
W
µ
• Low-power alpha immune 6T cell  
• Plastic SOJ and TSOP packaging  
The input/output pins remain in a high-impedance state unless  
the chip is selected, outputs are enabled, and Write Enable  
(WE) is HIGH. The CY7C1399 is available in 28-pin standard  
300-mil-wide SOJ and TSOP Type I packages.  
Functional Description  
The CY7C1399 is a high-performance 3.3V CMOS Static RAM  
organized as 32,768 words by 8 bits. Easy memory expansion  
Logic Block Diagram  
Pin Configurations  
SOJ  
Top View  
A
A
V
CC  
28  
27  
26  
1
2
3
4
5
6
5
6
WE  
A
A
7
A
4
8
25  
24  
A
3
A
9
A
2
A
A
A
23  
22  
10  
11  
A
1
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
7
8
9
10  
11  
12  
13  
OE  
A
0
0
1
2
3
4
5
6
21  
20  
19  
18  
17  
12  
13  
14  
INPUT BUFFER  
A
A
CE  
I/O  
A
0
7
I/O  
I/O  
I/O  
I/O  
I/O  
A
1
0
1
2
6
5
4
A
2
16  
15  
A
3
I/O  
I/O  
A
4
GND  
14  
3
32K x 8  
ARRAY  
A
5
A
6
A
7
A
C1399–2  
8
A
9
CE  
WE  
POWER  
DOWN  
COLUMN  
DECODER  
I/O  
7
OE  
C1399–1  
Selection Guide  
7C1399–12  
7C1399–15  
7C1399–20  
7C1399–25  
7C1399–35  
Maximum Access Time (ns)  
12  
60  
15  
55  
20  
50  
25  
45  
35  
40  
Maximum Operating Current (mA)  
Maximum CMOS Standby Current (µA)  
Maximum CMOS Standby Current (µA)  
500  
50  
500  
50  
500  
50  
500  
50  
500  
50  
L
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
March 25, 1999  

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