是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | LCC | 包装说明: | PLASTIC, LCC-52 |
针数: | 52 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.84 | 最长访问时间: | 35 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PQCC-J52 |
JESD-609代码: | e0 | 长度: | 19.1262 mm |
内存密度: | 32768 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 52 |
字数: | 4096 words | 字数代码: | 4000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4KX8 | |
输出特性: | 3-STATE | 可输出: | YES |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | QCCJ |
封装等效代码: | LDCC52,.8SQ | 封装形状: | SQUARE |
封装形式: | CHIP CARRIER | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最大待机电流: | 0.015 A | 最小待机电流: | 4.5 V |
子类别: | SRAMs | 最大压摆率: | 0.16 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | J BEND |
端子节距: | 1.27 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 19.1262 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CY7C135-35JCR | CYPRESS |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
CY7C135-35JCT | CYPRESS |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
CY7C135-35JI | CYPRESS |
获取价格 |
4K x 8 Dual-Port Static RAM and 4K x 8 Dual-Port SRAM with Semaphores | |
CY7C135-35JIR | CYPRESS |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
CY7C135-35JIT | CYPRESS |
获取价格 |
Dual-Port SRAM, 4KX8, 35ns, CMOS, PQCC52, PLASTIC, LCC-52 | |
CY7C1353-66AC | CYPRESS |
获取价格 |
256Kx18 Flow-Through SRAM with NoBL Architecture | |
CY7C1353-66ACT | CYPRESS |
获取价格 |
暂无描述 | |
CY7C1353B | CYPRESS |
获取价格 |
256Kx18 Flow-Through SRAM with NoBL Architecture | |
CY7C1353B-100AC | CYPRESS |
获取价格 |
256Kx18 Flow-Through SRAM with NoBL Architecture | |
CY7C1353B-100ACT | CYPRESS |
获取价格 |
ZBT SRAM, 256KX18, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |