5秒后页面跳转
CY7C1212F PDF预览

CY7C1212F

更新时间: 2024-09-17 04:35:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
15页 318K
描述
1-Mbit (64K x 18) Pipelined Sync SRAM

CY7C1212F 数据手册

 浏览型号CY7C1212F的Datasheet PDF文件第2页浏览型号CY7C1212F的Datasheet PDF文件第3页浏览型号CY7C1212F的Datasheet PDF文件第4页浏览型号CY7C1212F的Datasheet PDF文件第5页浏览型号CY7C1212F的Datasheet PDF文件第6页浏览型号CY7C1212F的Datasheet PDF文件第7页 
CY7C1212F  
1-Mbit (64K x 18) Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• 64K × 18 common I/O architecture  
• 3.3V core power supply  
• 3.3V I/O operation  
• Fast clock-to-output times  
The CY7C1212F SRAM integrates 65,536 x 18 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
— 3.5 ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
Control inputs (  
,
,
and  
ADSC ADSP  
), Write Enables  
ADV  
(
, and  
), and Global Write (  
BWE  
). Asynchronous  
GW  
BW[A:B]  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
• Provide high-performance 3-1-1-1 access rate  
Addresses and chip enables are registered at rising edge of  
• User-selectable burst counter supporting Intel  
clock when either Address Strobe Processor (  
) or  
ADSP  
Pentium® interleaved or linear burst sequences  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP package  
• “ZZ” Sleep Mode Option  
ADV  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two bytes wide as  
controlled by the Byte Write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
The CY7C1212F operates from a +3.3V core power supply  
while all outputs may operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
ADDRESS  
A0, A1, A  
REGISTER  
A[1:0]  
2
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
LOGIC  
CLR  
Q0  
ADSC  
ADSP  
DQB,DQP  
B
DQB,DQP  
WRITE REGISTER  
B
WRITE DRIVER  
OUTPUT  
BUFFERS  
BW  
B
A
DQs  
DQP  
DQP  
OUTPUT  
REGISTERS  
SENSE  
AMPS  
MEMORY  
ARRAY  
A
B
DQA,DQP  
A
E
DQA,DQP  
WRITE REGISTER  
A
WRITE DRIVER  
BW  
BWE  
GW  
INPUT  
REGISTERS  
ENABLE  
REGISTER  
CE1  
CE2  
PIPELINED  
ENABLE  
CE3  
OE  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05423 Rev. *A  
Revised April 7, 2004  

与CY7C1212F相关器件

型号 品牌 获取价格 描述 数据表
CY7C1212F-133AC CYPRESS

获取价格

1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1212F-133ACT CYPRESS

获取价格

Cache SRAM, 64KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
CY7C1212F-133AXC CYPRESS

获取价格

Cache SRAM, 64KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.4 MM HEIGHT, PLASTIC, TQFP-100
CY7C1212H CYPRESS

获取价格

1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1212H-100AXC CYPRESS

获取价格

1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1212H-100AXI CYPRESS

获取价格

1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1212H-133AXC CYPRESS

获取价格

1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1212H-133AXI CYPRESS

获取价格

1-Mbit (64K x 18) Pipelined Sync SRAM
CY7C1214F CYPRESS

获取价格

1-Mb (32K x 32) Flow-Through Sync SRAM
CY7C1214F-100AC CYPRESS

获取价格

1-Mb (32K x 32) Flow-Through Sync SRAM