CY7C1212F
1-Mbit (64K x 18) Pipelined Sync SRAM
Features
Functional Description[1]
• Registered inputs and outputs for pipelined operation
• 64K × 18 common I/O architecture
• 3.3V core power supply
• 3.3V I/O operation
• Fast clock-to-output times
The CY7C1212F SRAM integrates 65,536 x 18 SRAM cells
with advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(
), depth-expansion Chip Enables (CE and
), Burst
CE3
CE1
2
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
Control inputs (
,
,
and
ADSC ADSP
), Write Enables
ADV
(
, and
), and Global Write (
BWE
). Asynchronous
GW
BW[A:B]
inputs include the Output Enable ( ) and the ZZ pin.
OE
• Provide high-performance 3-1-1-1 access rate
Addresses and chip enables are registered at rising edge of
• User-selectable burst counter supporting Intel
clock when either Address Strobe Processor (
) or
ADSP
Pentium® interleaved or linear burst sequences
Address Strobe Controller (
) are active. Subsequent
ADSC
burst addresses can be internally generated as controlled by
the Advance pin ( ).
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Offered in JEDEC-standard 100-pin TQFP package
• “ZZ” Sleep Mode Option
ADV
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two bytes wide as
controlled by the Byte Write control inputs.
when active
GW
causes all bytes to be written.
LOW
The CY7C1212F operates from a +3.3V core power supply
while all outputs may operate with a +3.3V supply. All inputs
and outputs are JEDEC-standard JESD8-5-compatible.
Logic Block Diagram
ADDRESS
A0, A1, A
REGISTER
A[1:0]
2
MODE
Q1
ADV
CLK
BURST
COUNTER
AND
LOGIC
CLR
Q0
ADSC
ADSP
DQB,DQP
B
DQB,DQP
WRITE REGISTER
B
WRITE DRIVER
OUTPUT
BUFFERS
BW
B
A
DQs
DQP
DQP
OUTPUT
REGISTERS
SENSE
AMPS
MEMORY
ARRAY
A
B
DQA,DQP
A
E
DQA,DQP
WRITE REGISTER
A
WRITE DRIVER
BW
BWE
GW
INPUT
REGISTERS
ENABLE
REGISTER
CE1
CE2
PIPELINED
ENABLE
CE3
OE
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose, CA 95134
•
408-943-2600
Document #: 38-05423 Rev. *A
Revised April 7, 2004