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CY7C1215F-166ACT PDF预览

CY7C1215F-166ACT

更新时间: 2024-11-07 13:07:11
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赛普拉斯 - CYPRESS 内存集成电路静态存储器
页数 文件大小 规格书
16页 334K
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CY7C1215F-166ACT 数据手册

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CY7C1215F  
1-Mb (32K x 32) Pipelined Sync SRAM  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Features  
• Registered inputs and outputs for pipelined operation  
• 32K × 32 common I/O architecture  
• 3.3V core power supply  
• 3.3V I/O operation  
• Fast clock-to-output times  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
Control inputs (  
,
,
and  
), Write Enables  
ADV  
ADSC ADSP  
(
, and ), and Global Write (  
BWE  
). Asynchronous  
GW  
BW[A:D]  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
Addresses and chip enables are registered at rising edge of  
— 3.5ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
clock when either Address Strobe Processor (  
) or  
ADSP  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• Provide high-performance 3-1-1-1 access rate  
ADV  
• User-selectable burst counter supporting Intel  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to four bytes wide as  
Pentium® interleaved or linear burst sequences  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP package  
• “ZZ” Sleep Mode Option  
Functional Description[1]  
controlled by the Byte Write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
The CY7C1215F operates from a +3.3V core power supply  
while all outputs may operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
The CY7C1215F SRAM integrates 32,768 x 32 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
Logic Block Diagram  
A0, A1, A  
ADDRESS  
REGISTER  
2
A[1:0]  
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
CLR  
Q0  
LOGIC  
ADSC  
ADSP  
DQ  
BYTE  
WRITE REGISTER  
D
DQ  
BYTE  
WRITE DRIVER  
D
BW  
D
DQ  
BYTE  
C
DQ  
BYTE  
C
BW  
C
OUTPUT  
BUFFERS  
WRITE DRIVER  
OUTPUT  
REGISTERS  
WRITE REGISTER  
MEMORY  
ARRAY  
SENSE  
AMPS  
DQ s  
DQ  
B
E
DQ  
B
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BW  
BW  
B
A
DQ  
A
DQ  
A
BYTE  
WRITE DRIVER  
BYTE  
WRITE REGISTER  
BWE  
INPUT  
REGISTERS  
GW  
ENABLE  
REGISTER  
PIPELINED  
ENABLE  
CE  
CE  
CE  
1
2
3
OE  
SLEEP  
CONTROL  
ZZ  
1
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05421 Rev. **  
Revised January 26, 2004  

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