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CY7C1212F-133AC PDF预览

CY7C1212F-133AC

更新时间: 2024-09-17 03:55:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
15页 318K
描述
1-Mbit (64K x 18) Pipelined Sync SRAM

CY7C1212F-133AC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:14 X 20 MM, 1.4 MM HEIGHT, PLASTIC, TQFP-100
针数:100Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.87最长访问时间:4 ns
其他特性:PIPELINED ARCHITECTURE最大时钟频率 (fCLK):133 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:1179648 bit内存集成电路类型:CACHE SRAM
内存宽度:18湿度敏感等级:3
功能数量:1端子数量:100
字数:65536 words字数代码:64000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:64KX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装等效代码:QFP100,.63X.87
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:3.3 V认证状态:Not Qualified
座面最大高度:1.6 mm最大待机电流:0.04 A
最小待机电流:3.14 V子类别:SRAMs
最大压摆率:0.225 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN LEAD (800)
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mm

CY7C1212F-133AC 数据手册

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CY7C1212F  
1-Mbit (64K x 18) Pipelined Sync SRAM  
Features  
Functional Description[1]  
• Registered inputs and outputs for pipelined operation  
• 64K × 18 common I/O architecture  
• 3.3V core power supply  
• 3.3V I/O operation  
• Fast clock-to-output times  
The CY7C1212F SRAM integrates 65,536 x 18 SRAM cells  
with advanced synchronous peripheral circuitry and a two-bit  
counter for internal burst operation. All synchronous inputs are  
gated by registers controlled by a positive-edge-triggered  
Clock Input (CLK). The synchronous inputs include all  
addresses, all data inputs, address-pipelining Chip Enable  
(
), depth-expansion Chip Enables (CE and  
), Burst  
CE3  
CE1  
2
— 3.5 ns (for 166-MHz device)  
— 4.0 ns (for 133-MHz device)  
Control inputs (  
,
,
and  
ADSC ADSP  
), Write Enables  
ADV  
(
, and  
), and Global Write (  
BWE  
). Asynchronous  
GW  
BW[A:B]  
inputs include the Output Enable ( ) and the ZZ pin.  
OE  
• Provide high-performance 3-1-1-1 access rate  
Addresses and chip enables are registered at rising edge of  
• User-selectable burst counter supporting Intel  
clock when either Address Strobe Processor (  
) or  
ADSP  
Pentium® interleaved or linear burst sequences  
Address Strobe Controller (  
) are active. Subsequent  
ADSC  
burst addresses can be internally generated as controlled by  
the Advance pin ( ).  
• Separate processor and controller address strobes  
• Synchronous self-timed writes  
• Asynchronous output enable  
• Offered in JEDEC-standard 100-pin TQFP package  
• “ZZ” Sleep Mode Option  
ADV  
Address, data inputs, and write controls are registered on-chip  
to initiate a self-timed Write cycle.This part supports Byte Write  
operations (see Pin Descriptions and Truth Table for further  
details). Write cycles can be one to two bytes wide as  
controlled by the Byte Write control inputs.  
when active  
GW  
causes all bytes to be written.  
LOW  
The CY7C1212F operates from a +3.3V core power supply  
while all outputs may operate with a +3.3V supply. All inputs  
and outputs are JEDEC-standard JESD8-5-compatible.  
Logic Block Diagram  
ADDRESS  
A0, A1, A  
REGISTER  
A[1:0]  
2
MODE  
Q1  
ADV  
CLK  
BURST  
COUNTER  
AND  
LOGIC  
CLR  
Q0  
ADSC  
ADSP  
DQB,DQP  
B
DQB,DQP  
WRITE REGISTER  
B
WRITE DRIVER  
OUTPUT  
BUFFERS  
BW  
B
A
DQs  
DQP  
DQP  
OUTPUT  
REGISTERS  
SENSE  
AMPS  
MEMORY  
ARRAY  
A
B
DQA,DQP  
A
E
DQA,DQP  
WRITE REGISTER  
A
WRITE DRIVER  
BW  
BWE  
GW  
INPUT  
REGISTERS  
ENABLE  
REGISTER  
CE1  
CE2  
PIPELINED  
ENABLE  
CE3  
OE  
Note:  
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose, CA 95134  
408-943-2600  
Document #: 38-05423 Rev. *A  
Revised April 7, 2004  

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