CY7C109BN
CY7C1009BN
128K x 8 Static RAM
Features
Functional Description[1]
• High speed
The CY7C109BN/CY7C1009BN is a high-performance
CMOS static RAM organized as 131,072 words by 8 bits. Easy
memory expansion is provided by an active LOW Chip Enable
(CE1), an active HIGH Chip Enable (CE2), an active LOW
Output Enable (OE), and three-state drivers. Writing to the
device is accomplished by taking Chip Enable One (CE1) and
Write Enable (WE) inputs LOW and Chip Enable Two (CE2)
input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is
then written into the location specified on the address pins (A0
through A16).
— tAA = 12 ns
• Low active power
— 495 mW (max. 12 ns)
• Low CMOS standby power
— 55 mW (max.) 4 mW
• 2.0V Data Retention
• Automatic power-down when deselected
• TTL-compatible inputs and outputs
• Easy memory expansion with CE1, CE2, and OE options
Reading from the device is accomplished by taking Chip
Enable One (CE1) and Output Enable (OE) LOW while forcing
Write Enable (WE) and Chip Enable Two (CE2) HIGH. Under
these conditions, the contents of the memory location
specified by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).
The CY7C109BN is available in standard 400-mil-wide SOJ
and 32-pin TSOP type I packages. The CY7C1009BN is
available in a 300-mil-wide SOJ package. The CY7C1009BN
and CY7C109BN are functionally equivalent in all other
respects.
Logic Block Diagram
Pin Configurations
SOJ
Top View
V
NC
32
31
30
1
CC
A
16
A
15
CE
2
3
4
A
14
2
A
12
29
28
WE
5
A
7
A
6
A
5
A
A
A
13
8
27
26
6
7
9
25
24
23
22
21
A
A
8
9
10
11
12
13
A
4
3
11
OE
I/O
0
A
A
A
10
2
1
INPUT BUFFER
CE
I/O
I/O
1
7
6
A
I/O
0
0
I/O
I/O
1
20
19
A
0
A
1
I/O
I/O
GND
I/O
1
5
14
15
16
I/O
I/O
2
18
17
4
3
2
A
2
A
4
3
A
A
A
A
A
WE
CE
A
1
2
32
31
OE
11
I/O
I/O
I/O
I/O
3
4
5
512 x 256 x 8
ARRAY
A
A
9
8
10
5
6
3
4
5
6
7
8
30
29
28
27
26
25
24
23
22
21
20
19
18
17
CE
I/O
A
13
7
A
7
8
I/O
I/O
6
5
A
2
15
I/O
I/O
TSOP I
4
3
V
Top View
CC
NC
A
A
A
A
A
6
A
A
9
GND
(not to scale)
I/O
10
11
12
13
14
15
16
16
2
6
7
POWER
DOWN
I/O
1
COLUMN
DECODER
14
12
CE
2
WE
1
I/O
0
CE
A
0
7
I/O
A
1
A
2
5
4
A
3
OE
Note:
1. For guidelines on SRAM system design, please refer to the ‘System Design Guidelines’ Cypress application note, available on the internet at www.cypress.com.
Cypress Semiconductor Corporation
Document #: 001-06430 Rev. **
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised February 1, 2006
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