CY7C10612DV33
16-Mbit (1M x 16) Static RAM
Features
Functional Description
■ High speed
❐ tAA = 10 ns
The CY7C10612DV33 is a high performance CMOS Static RAM
organized as 1,048,576 words by 16 bits.
To write to the device, take Chip Enables (CE) and Write Enable
(WE) input LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO0 through IO7), is written into the location
specified on the address pins (A0 through A19). If Byte High
■ Low active power
❐ ICC = 175 mA at 10 ns
■ Low CMOS standby power
❐ ISB2 = 25 mA
Enable (BHE) is LOW, then data from IO pins (IO8 through IO15
)
is written into the location specified on the address pins (A0
through A19).
■ Operating voltages of 3.3 ± 0.3V
■ 2.0V data retention
To read from the device, take Chip Enables (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on IO0 to IO7. If
Byte High Enable (BHE) is LOW, then data from memory
appears on IO8 to IO15. See the Truth Table on page 9 for a
complete description of Read and Write modes.
■ Automatic power down when deselected
■ TTL compatible inputs and outputs
■ Easy memory expansion with CE and OE features
■ Available in Pb-free 54-Pin TSOP II package
The input or output pins (IO0 through IO15) are placed in a high
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), the BHE and BLE are disabled
(BHE, BLE HIGH), or during a write operation (CE LOW and WE
LOW).
The CY7C10612DV33 is available in a 54-Pin TSOP II package
with center power and ground (revolutionary) pinout.
Logic Block Diagram
INPUT BUFFER
A
0
A
1
A
2
A
4
3
IO0 – IO7
1M x 16
ARRAY
A
A
5
IO8 – IO15
A
6
A
7
A
8
A
9
COLUMN
DECODER
BHE
WE
CE
OE
BLE
Cypress Semiconductor Corporation
Document Number: 001-49315 Rev. *A
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 15, 2009
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