5秒后页面跳转
CY7C1020CV33_10 PDF预览

CY7C1020CV33_10

更新时间: 2024-01-22 04:53:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
13页 446K
描述
512 K (32 K × 16) Static RAM

CY7C1020CV33_10 数据手册

 浏览型号CY7C1020CV33_10的Datasheet PDF文件第2页浏览型号CY7C1020CV33_10的Datasheet PDF文件第3页浏览型号CY7C1020CV33_10的Datasheet PDF文件第4页浏览型号CY7C1020CV33_10的Datasheet PDF文件第5页浏览型号CY7C1020CV33_10的Datasheet PDF文件第6页浏览型号CY7C1020CV33_10的Datasheet PDF文件第7页 
CY7C1020CV33  
512 K (32 K × 16) Static RAM  
512  
K (32 K × 16) Static RAM  
Features  
Functional Description  
Pin- and function-compatible with CY7C1020CV33  
The CY7C1020CV33 is a high-performance CMOS static RAM  
organized as 32,768 words by 16 bits. This device has an  
automatic power-down feature that significantly reduces power  
consumption when deselected.  
Temperature Ranges  
Commercial: 0 °C to 70 °C  
Industrial: –40 °C to 85 °C  
Automotive: –40 °C to 125 °C  
Writing to the device is accomplished by taking Chip Enable (CE)  
and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is  
LOW, then data from I/O pins (I/O1 through I/O8), is written into  
the location specified on the address pins (A0 through A14). If  
Byte High Enable (BHE) is LOW, then data from I/O pins (I/O9  
through I/O16) is written into the location specified on the address  
pins (A0 through A14).  
High speed  
tAA = 10 ns  
CMOS for optimum speed/power  
Low active power  
325 mW (max)  
Reading from the device is accomplished by taking Chip Enable  
(CE) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data  
from the memory location specified by the address pins will  
appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW, then  
data from memory will appear on I/O9 to I/O16. See the truth table  
at the back of this data sheet for a complete description of read  
and write modes.  
Automatic power-down when deselected  
Independent control of upper and lower bits  
Available in Pb-free and non Pb-free 44-pin TSOP II package  
The input/output pins (I/O1 through I/O16) are placed in a  
high-impedance state when the device is deselected (CE HIGH),  
the outputs are disabled (OE HIGH), the BHE and BLE are  
disabled (BHE, BLE HIGH), or during a write operation (CE LOW,  
and WE LOW).  
The CY7C1020CV33 is available in standard 44-pin TSOP Type  
II package.  
Logic Block Diagram  
DATA IN DRIVERS  
A7  
A6  
A5  
A4  
A3  
A2  
32K × 16  
I/O1–I/O8  
RAM Array  
I/O9–I/O16  
A1  
A0  
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Cypress Semiconductor Corporation  
Document Number: 38-05133 Rev. *H  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised December 2, 2010  
[+] Feedback  

与CY7C1020CV33_10相关器件

型号 品牌 获取价格 描述 数据表
CY7C1020CV33_12 CYPRESS

获取价格

512 K (32 K × 16) Static RAM
CY7C1020CV33-10ZC CYPRESS

获取价格

32K x 16 Static RAM
CY7C1020CV33-10ZCT CYPRESS

获取价格

Standard SRAM, 32KX16, 10ns, CMOS, PDSO44, TSOP2-44
CY7C1020CV33-10ZI CYPRESS

获取价格

32K x 16 Static RAM
CY7C1020CV33-10ZXC CYPRESS

获取价格

512K (32K x 16) Static RAM
CY7C1020CV33-12ZC CYPRESS

获取价格

32K x 16 Static RAM
CY7C1020CV33-12ZCT CYPRESS

获取价格

Standard SRAM, 32KX16, 12ns, CMOS, PDSO44, TSOP2-44
CY7C1020CV33-12ZI CYPRESS

获取价格

32K x 16 Static RAM
CY7C1020CV33-15ZC CYPRESS

获取价格

32K x 16 Static RAM
CY7C1020CV33-15ZE CYPRESS

获取价格

512K (32K x 16) Static RAM