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CY7C1020B PDF预览

CY7C1020B

更新时间： 2024-02-24 23:16:48
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 183K
描述
32K x 16 Static RAM

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中文翻译

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CY7C1020B 数据手册

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020B  
CY7C1020B  
32K x 16 Static RAM  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is  
written into the location specified on the address pins (A0  
through A15). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O9 through I/O16) is written into the location  
specified on the address pins (A0 through A15).  
Features  
• High speed  
— tAA = 12, 15 ns  
• CMOS for optimum speed/power  
• Low active power  
— 825 mW (max.)  
Reading from the device is accomplished by taking Chip En-  
able (CE) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then  
data from the memory location specified by the address pins  
will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW,  
then data from memory will appear on I/O9 to I/O16. See the  
truth table at the back of this data sheet for a complete descrip-  
tion of read and write modes.  
• Low CMOS standby power (L version only)  
— 2.75 mW (max.)  
• Automatic power-down when deselected  
• Independent control of upper and lower bits  
• Available in 44-pin TSOP II and 400-mil SOJ  
Functional Description  
The input/output pins (I/O1 through I/O16) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
The CY7C1020B is a high-performance CMOS static RAM or-  
ganized as 32,768 words by 16 bits. This device has an auto-  
matic power-down feature that significantly reduces power  
consumption when deselected.  
The CY7C1020B is available in standard 44-pin TSOP Type II  
and 400-mil-wide SOJ packages.  
Logic Block Diagram  
Pin Configuration  
SOJ / TSOP II  
DATA IN DRIVERS  
Top View  
44  
1
2
3
4
5
6
NC  
A
5
43  
42  
41  
40  
39  
38  
A
A
3
6
A
2
A
7
A
A
A
7
6
5
4
OE  
A
1
A
BHE  
BLE  
I/O  
0
32K x 16  
CE  
A
A
A
A
I/O –I/O  
RAM Array  
I/O  
1
8
7
1
16  
37  
36  
35  
34  
33  
3
2
I/O  
I/O  
8
I/O  
I/O  
2
3
15  
14  
13  
I/O –I/O  
9
9
16  
10  
11  
12  
I/O  
V
SS  
I/O  
1
0
4
CC  
V
SS  
A
V
V
CC  
I/O  
32  
31  
30  
29  
28  
27  
I/O  
I/O  
13  
5
6
7
8
12  
11  
I/O  
I/O  
I/O  
14  
15  
16  
I/O  
I/O  
10  
9
COLUMN DECODER  
WE 17  
18  
NC  
A
A
A
A
15  
14  
13  
8
BHE  
19  
20  
21  
22  
26  
25  
A
9
10  
11  
WE  
CE  
OE  
A
A
A
12  
24  
23  
NC  
NC  
BLE  
Selection Guide  
7C1020B-12  
7C1020B-15  
Maximum Access Time (ns)  
Commercial  
Commercial  
Commercial  
L
12  
140  
3
15  
130  
3
Maximum Operating Current (mA)  
Maximum CMOS Standby Current (mA)  
0.5  
0.5  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05171 Rev. *A  
Revised August 20, 2002  
1234567...10

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