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CY7C1020B-15ZC PDF预览

CY7C1020B-15ZC

更新时间: 2024-10-27 22:39:47
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 183K
描述
32K x 16 Static RAM

CY7C1020B-15ZC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2-44
针数:44Reach Compliance Code:not_compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.67最长访问时间:15 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G44
JESD-609代码:e0长度:18.415 mm
内存密度:524288 bit内存集成电路类型:STANDARD SRAM
内存宽度:16湿度敏感等级:3
功能数量:1端子数量:44
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装等效代码:TSOP44,.46,32
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
座面最大高度:1.194 mm最大待机电流:0.003 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:10.16 mm

CY7C1020B-15ZC 数据手册

 浏览型号CY7C1020B-15ZC的Datasheet PDF文件第2页浏览型号CY7C1020B-15ZC的Datasheet PDF文件第3页浏览型号CY7C1020B-15ZC的Datasheet PDF文件第4页浏览型号CY7C1020B-15ZC的Datasheet PDF文件第5页浏览型号CY7C1020B-15ZC的Datasheet PDF文件第6页浏览型号CY7C1020B-15ZC的Datasheet PDF文件第7页 
020B  
CY7C1020B  
32K x 16 Static RAM  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is  
written into the location specified on the address pins (A0  
through A15). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O9 through I/O16) is written into the location  
specified on the address pins (A0 through A15).  
Features  
• High speed  
— tAA = 12, 15 ns  
• CMOS for optimum speed/power  
• Low active power  
— 825 mW (max.)  
Reading from the device is accomplished by taking Chip En-  
able (CE) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then  
data from the memory location specified by the address pins  
will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW,  
then data from memory will appear on I/O9 to I/O16. See the  
truth table at the back of this data sheet for a complete descrip-  
tion of read and write modes.  
• Low CMOS standby power (L version only)  
— 2.75 mW (max.)  
• Automatic power-down when deselected  
• Independent control of upper and lower bits  
• Available in 44-pin TSOP II and 400-mil SOJ  
Functional Description  
The input/output pins (I/O1 through I/O16) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
The CY7C1020B is a high-performance CMOS static RAM or-  
ganized as 32,768 words by 16 bits. This device has an auto-  
matic power-down feature that significantly reduces power  
consumption when deselected.  
The CY7C1020B is available in standard 44-pin TSOP Type II  
and 400-mil-wide SOJ packages.  
Logic Block Diagram  
Pin Configuration  
SOJ / TSOP II  
DATA IN DRIVERS  
Top View  
44  
1
2
3
4
5
6
NC  
A
5
43  
42  
41  
40  
39  
38  
A
A
3
6
A
2
A
7
A
A
A
7
6
5
4
OE  
A
1
A
BHE  
BLE  
I/O  
0
32K x 16  
CE  
A
A
A
A
I/O –I/O  
RAM Array  
I/O  
1
8
7
1
16  
37  
36  
35  
34  
33  
3
2
I/O  
I/O  
8
I/O  
I/O  
2
3
15  
14  
13  
I/O I/O  
9
9
16  
10  
11  
12  
I/O  
V
SS  
I/O  
1
0
4
CC  
V
SS  
A
V
V
CC  
I/O  
32  
31  
30  
29  
28  
27  
I/O  
I/O  
13  
5
6
7
8
12  
11  
I/O  
I/O  
I/O  
14  
15  
16  
I/O  
I/O  
10  
9
COLUMN DECODER  
WE 17  
18  
NC  
A
A
A
A
15  
14  
13  
8
BHE  
19  
20  
21  
22  
26  
25  
A
9
10  
11  
WE  
CE  
OE  
A
A
A
12  
24  
23  
NC  
NC  
BLE  
Selection Guide  
7C1020B-12  
7C1020B-15  
Maximum Access Time (ns)  
Commercial  
Commercial  
Commercial  
L
12  
140  
3
15  
130  
3
Maximum Operating Current (mA)  
Maximum CMOS Standby Current (mA)  
0.5  
0.5  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05171 Rev. *A  
Revised August 20, 2002  

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