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CY7C0852V-100AC PDF预览

CY7C0852V-100AC

更新时间: 2024-09-18 20:02:19
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 时钟静态存储器内存集成电路
页数 文件大小 规格书
33页 698K
描述
Dual-Port SRAM, 128KX36, 5ns, CMOS, PQFP176, 24 X 24 MM, 1.40 MM HEIGHT, TQFP-176

CY7C0852V-100AC 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:24 X 24 MM, 1.40 MM HEIGHT, TQFP-176针数:176
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.77
最长访问时间:5 ns其他特性:PIPELINED ARCHITECTURE
最大时钟频率 (fCLK):100 MHzI/O 类型:COMMON
JESD-30 代码:S-PQFP-G176长度:24 mm
内存密度:4718592 bit内存集成电路类型:DUAL-PORT SRAM
内存宽度:36功能数量:1
端口数量:2端子数量:176
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:LFQFP封装等效代码:QFP176,1.0SQ,20
封装形状:SQUARE封装形式:FLATPACK, LOW PROFILE, FINE PITCH
并行/串行:PARALLEL电源:3.3 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.03 A最小待机电流:3.14 V
子类别:SRAMs最大压摆率:0.31 mA
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.5 mm
端子位置:QUAD宽度:24 mm
Base Number Matches:1

CY7C0852V-100AC 数据手册

 浏览型号CY7C0852V-100AC的Datasheet PDF文件第2页浏览型号CY7C0852V-100AC的Datasheet PDF文件第3页浏览型号CY7C0852V-100AC的Datasheet PDF文件第4页浏览型号CY7C0852V-100AC的Datasheet PDF文件第5页浏览型号CY7C0852V-100AC的Datasheet PDF文件第6页浏览型号CY7C0852V-100AC的Datasheet PDF文件第7页 
CY7C0851V/CY7C0852V/CY7C0853V  
PRELIMINARY  
CY7C0831V/CY7C0832V  
3.3V 64K/128K/256K x 36 and 128K/256K x 18  
Synchronous Dual-Port RAM  
Functional Description (all)  
Features (all)  
The CY7C085XV/CY7C083XV are 2M, 4.5M, and 9M  
• Truedual-portedmemorycells that allow simultaneous  
access of the same memory location  
• Synchronous pipelined  
• Organization of 2M, 4.5M, and 9M devices  
— 256K × 36 (CY7C0853V)  
pipelined, synchronous, true dual-port static RAMs that are  
high-speed, low-power 3.3V CMOS. Two ports are provided,  
permitting independent, simultaneous access for Reads from  
any location in memory. A particular port can write to a certain  
location while another port is reading that location. The result  
of writing to the same location by more than one port at the  
same time is undefined. Registers on control, address, and  
data lines allow for minimal set-up and hold time.  
— 128K × 36 (CY7C0852V)  
— 64K × 36 (CY7C0851V)  
— 256K × 18 (CY7C0832V)  
Functional Description (all except CY7C0853V)  
— 128K × 18 (CY7C0831V)  
During a Read operation, data is registered for decreased  
cycle time. Clock to data valid tCD2 = 4.0 ns at 150 MHz. Each  
port contains a burst counter on the input address register.  
After externally loading the counter with the initial address, the  
counter will increment the address internally (more details to  
follow). The internal Write pulse width is independent of the  
duration of the R/W input signal. The internal Write pulse is  
self-timed to allow the shortest possible cycle times.  
• Pipelined output mode allows fast 150-MHz operation  
• 0.18-micron CMOS for optimum speed and power  
• High-speed clock to data access: 4.0 ns (max.)  
• 3.3V low operating power  
— Active = 300 mA (typical)  
— Standby = 10 mA (typical)  
A HIGH on CE0 or LOW on CE1 for one clock cycle will power  
down the internal circuitry to reduce the static power  
consumption. One cycle with chip enables asserted is required  
to reactivate the outputs.  
• Interrupt flags for message passing  
• Global master reset  
• Separate byte enables on both ports  
• Commercial and industrial temperature ranges  
• IEEE 1149.1-compatible JTAG boundary scan  
• 172-ball BGA (1 mm pitch) (15 mm × 15 mm)  
• 120-pin TQFP (14 mm × 14 mm × 1.4 mm)  
• 176-pin TQFP (24 mm × 24 mm × 1.4 mm)  
Counter enable (CNTEN) inputs are provided to stall the  
operation of the address input and utilize the internal address  
generated by the internal counter for fast, interleaved memory  
applications. A ports burst counter is loaded when the ports  
address strobe (ADS) and CNTEN signals are LOW. When the  
ports CNTEN is asserted and the ADS is deasserted, the  
address counter will increment on each LOW to HIGH  
transition of that ports clock signal. This will Read/Write one  
word from/into each successive address location until CNTEN  
is deasserted. The counter can address the entire memory  
array, and will loop back to the start. Counter reset (CNTRST)  
is used to reset the unmasked portion of the burst counter to  
0s. A counter-mask register is used to control the counter  
wrap. The counter and mask register operations are described  
in more detail in the following sections.  
• FLEx36 devices are pin footprint upgradeable from  
2M to 4M to 9M  
Features (all except CY7C0853V)  
• Counter wrap around control  
— Internal maskregister controlscounter wrap-around  
— Counter-interrupt flags to indicate wrap-around  
— Memory block retransmit operation  
• Counter readback on address lines  
• Mask register readback on address lines  
• Dual Chip Enables on both ports for easy depth  
expansion  
New features added to the CY7C08X1V/CY7C08X2V devices  
include: readback of burst-counter internal address value on  
address lines, counter-mask registers to control the counter  
wrap-around, counter interrupt (CNTINT) flags, readback of  
mask register value on address lines, retransmit functionality,  
interrupt flags for message passing, JTAG for boundary scan,  
and asynchronous Master Reset (MRST).  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-06059 Rev. *C  
Revised April 22, 2002  

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