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CY62158DV30LL-55ZSXIT PDF预览

CY62158DV30LL-55ZSXIT

更新时间： 2024-11-18 19:34:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
11页 401K
描述
Standard SRAM, 1MX8, 55ns, CMOS, PDSO44, LEAD FREE, TSOP2-44

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CY62158DV30LL-55ZSXIT 技术参数

生命周期：Obsolete零件包装代码：TSOP2
包装说明：TSOP2,针数：44
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.52
最长访问时间：55 nsJESD-30 代码：R-PDSO-G44
JESD-609代码：e3/e4长度：18.415 mm
内存密度：8388608 bit内存集成电路类型：STANDARD SRAM
内存宽度：8功能数量：1
端子数量：44字数：1048576 words
字数代码：1000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：1MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP2封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
认证状态：Not Qualified座面最大高度：1.194 mm
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.2 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：MATTE TIN/NICKEL PALLADIUM GOLD端子形式：GULL WING
端子节距：0.8 mm端子位置：DUAL
宽度：10.16 mmBase Number Matches：1

CY62158DV30LL-55ZSXIT 数据手册

 浏览型号CY62158DV30LL-55ZSXIT的Datasheet PDF文件第2页浏览型号CY62158DV30LL-55ZSXIT的Datasheet PDF文件第3页浏览型号CY62158DV30LL-55ZSXIT的Datasheet PDF文件第4页浏览型号CY62158DV30LL-55ZSXIT的Datasheet PDF文件第5页浏览型号CY62158DV30LL-55ZSXIT的Datasheet PDF文件第6页浏览型号CY62158DV30LL-55ZSXIT的Datasheet PDF文件第7页 
CY62158DV30  
MoBL  
8-Mbit (1024K x 8) MoBLStatic RAM  
This is ideal for providing More Battery Life™ (MoBL) in  
portable applications such as cellular telephones. The device  
also has an automatic power-down feature that significantly  
reduces power consumption. The device can be put into  
standby mode reducing power consumption by 85% when  
deselected (CE1 HIGH or CE2 LOW).  
Features  
• Very high speed: 45 ns, 55 ns and 70 ns  
— Wide voltage range: 2.20V – 3.60V  
• Ultra-low active power  
— Typical active current:1.5 mA @ f = 1 MHz  
— Typical active current: 12 mA @ f = fmax  
• Ultra-low standby power  
Writing to the device is accomplished by taking Chip Enable 1  
(CE1) and Write Enable (WE) inputs LOW and Chip Enable 2  
(CE2) HIGH. Data on the eight I/O pins (I/O0 through I/O7) is  
then written into the location specified on the address pins (A0  
• Easy memory expansion with CE1, CE2, and OE  
through A19).  
features  
Reading from the device is accomplished by taking Chip  
Enable 1 (CE1) and Output Enable (OE) LOW and Chip  
Enable 2 (CE2) HIGH while forcing Write Enable (WE) HIGH.  
Under these conditions, the contents of the memory location  
specified by the address pins will appear on the I/O pins.  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE1  
LOW and CE2 HIGH), the outputs are disabled (OE HIGH), or  
during a write operation (CE1 LOW and CE2 HIGH and WE  
LOW). See the truth table for a complete description of read  
and write modes.  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
• Packages offered in a 48-ball BGA, 48-pin TSOPI, and  
44-pin TSOPII  
Functional Description[1]  
The CY62158DV30 is a high-performance CMOS static RAMs  
organized as 1024K words by 8 bits. This device features  
advanced circuit design to provide ultra-low active current.  
Logic Block Diagram  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
0
Data in Drivers  
A0  
A1  
A2  
A3  
A4  
1
2
A
A5  
A6  
3
4
5
1024K x 8  
A7  
ARRAY  
A98  
A10  
A11  
A12  
6
7
POWER  
DOWN  
COLUMN  
CE  
CE  
1
2
DECODER  
I/O  
WE  
OE  
Note:  
1. For best practice recommendations, please refer to the Cypress application note entitled System Design Guidelines, available at http://www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Document #: 38-05391 Rev. *D  
Revised June 17, 2004  
1234567...11

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