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CY62148ESL-55ZAXI PDF预览

CY62148ESL-55ZAXI

更新时间: 2023-12-06 20:12:24
品牌 Logo 应用领域
英飞凌 - INFINEON 静态存储器
页数 文件大小 规格书
18页 311K
描述
Asynchronous SRAM

CY62148ESL-55ZAXI 数据手册

 浏览型号CY62148ESL-55ZAXI的Datasheet PDF文件第3页浏览型号CY62148ESL-55ZAXI的Datasheet PDF文件第4页浏览型号CY62148ESL-55ZAXI的Datasheet PDF文件第5页浏览型号CY62148ESL-55ZAXI的Datasheet PDF文件第7页浏览型号CY62148ESL-55ZAXI的Datasheet PDF文件第8页浏览型号CY62148ESL-55ZAXI的Datasheet PDF文件第9页 
CY62148ESL MoBL  
Capacitance  
Parameter [10]  
Description  
Input capacitance  
Output capacitance  
Test Conditions  
Max  
10  
Unit  
pF  
CIN  
TA = 25 °C, f = 1 MHz, VCC = VCC(Typ)  
COUT  
10  
pF  
Thermal Resistance  
Parameter [10]  
Description  
Test Conditions  
32-pin STSOP Unit  
JA  
Thermal resistance  
(junction to ambient)  
Still air, soldered on a 3 × 4.5 inch, two-layer printed circuit  
board  
49.02  
C/W  
JC  
Thermal resistance  
(junction to case)  
14.07  
C/W  
AC Test Loads and Waveforms  
Figure 2. AC Test Loads and Waveforms  
R1  
ALL INPUT PULSES  
VCC  
VCC  
90%  
90%  
OUTPUT  
10%  
10%  
R2  
GND  
Rise Time = 1 V/ns  
30 pF  
Fall Time = 1 V/ns  
INCLUDING  
JIG AND  
Equivalent to:  
THEVENIN EQUIVALENT  
RTH  
SCOPE  
OUTPUT  
VTH  
Parameter  
R1  
2.5 V  
16667  
15385  
8000  
3.0 V  
1103  
1554  
645  
5.0 V  
1800  
990  
Unit  
R2  
RTH  
639  
VTH  
1.20  
1.75  
1.77  
V
Note  
10. Tested initially and after any design or process changes that may affect these parameters.  
Document Number: 001-50045 Rev. *K  
Page 5 of 17  

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