Datasheet > CY62148BN_09

CY62148BN_09

更新时间： 2024-11-20 06:51:35

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
10页	319K
描述
4-Mbit (512K x 8) Static RAM

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CY62148BN_09 数据手册

CY62148BN MoBL^®

4-Mbit (512K x 8) Static RAM

Functional Description

Features

• High Speed

The CY62148BN is a high-performance CMOS static RAM

organized as 512K words by 8 bits. Easy memory expansion

is provided by an active LOW Chip Enable (CE), an active

LOW Output Enable (OE), and three-state drivers. This device

has an automatic power-down feature that reduces power

consumption by more than 99% when deselected.

— 70 ns

• 4.5V–5.5V operation

• Low active power

— Typical active current: 2.5 mA @ f = 1 MHz

— Typical active current:12.5 mA @ f = f_max(70 ns)

• Low standby current

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O

pins (I/O₀through I/O₇) is then written into the location

specified on the address pins (A₀through A₁₈).

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

• Easy memory expansion with CE and OE features

• CMOS for optimum speed/power

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH for read. Under these conditions, the

contents of the memory location specified by the address pins

will appear on the I/O pins.

• Available in standard lead-free and non-lead-free

32-lead (450-mil) SOIC, 32-lead TSOP II and 32-lead

Reverse TSOP II packages

The eight input/output pins (I/O₀through I/O₇) are placed in a

high-impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE LOW, and WE LOW).

Logic Block Diagram

I/O

INPUT BUFFER

I/O

512K x 8

ARRAY

I/O

POWER

DOWN

COLUMN

DECODER

I/O

Cypress Semiconductor Corporation

Document #: 001-06517 Rev. *A

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised August 2, 2006

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