5秒后页面跳转
CY62148BNLL-70SCT PDF预览

CY62148BNLL-70SCT

更新时间: 2024-11-20 13:07:11
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
10页 319K
描述
Standard SRAM, 512KX8, 70ns, CMOS, PDSO32, 0.450 INCH, SOIC-32

CY62148BNLL-70SCT 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.65
最长访问时间:70 nsJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.4465 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:512KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:2.997 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
宽度:11.303 mmBase Number Matches:1

CY62148BNLL-70SCT 数据手册

 浏览型号CY62148BNLL-70SCT的Datasheet PDF文件第2页浏览型号CY62148BNLL-70SCT的Datasheet PDF文件第3页浏览型号CY62148BNLL-70SCT的Datasheet PDF文件第4页浏览型号CY62148BNLL-70SCT的Datasheet PDF文件第5页浏览型号CY62148BNLL-70SCT的Datasheet PDF文件第6页浏览型号CY62148BNLL-70SCT的Datasheet PDF文件第7页 
CY62148BN MoBL®  
4-Mbit (512K x 8) Static RAM  
Functional Description  
Features  
• High Speed  
The CY62148BN is a high-performance CMOS static RAM  
organized as 512K words by 8 bits. Easy memory expansion  
is provided by an active LOW Chip Enable (CE), an active  
LOW Output Enable (OE), and three-state drivers. This device  
has an automatic power-down feature that reduces power  
consumption by more than 99% when deselected.  
— 70 ns  
• 4.5V–5.5V operation  
• Low active power  
— Typical active current: 2.5 mA @ f = 1 MHz  
— Typical active current:12.5 mA @ f = fmax(70 ns)  
Low standby current  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O  
pins (I/O0 through I/O7) is then written into the location  
specified on the address pins (A0 through A18).  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Easy memory expansion with CE and OE features  
• CMOS for optimum speed/power  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing Write  
Enable (WE) HIGH for read. Under these conditions, the  
contents of the memory location specified by the address pins  
will appear on the I/O pins.  
• Available in standard lead-free and non-lead-free  
32-lead (450-mil) SOIC, 32-lead TSOP II and 32-lead  
Reverse TSOP II packages  
The eight input/output pins (I/O0 through I/O7) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), or during a write  
operation (CE LOW, and WE LOW).  
Logic Block Diagram  
I/O  
0
INPUT BUFFER  
I/O  
I/O  
1
2
A
0
A
1
A
4
A
5
A
6
I/O  
I/O  
I/O  
3
4
5
512K x 8  
ARRAY  
A
7
A
12  
A
14  
A
16  
A
17  
I/O  
6
7
POWER  
DOWN  
COLUMN  
DECODER  
CE  
I/O  
WE  
OE  
Cypress Semiconductor Corporation  
Document #: 001-06517 Rev. *A  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 2, 2006  
[+] Feedback  

与CY62148BNLL-70SCT相关器件

型号 品牌 获取价格 描述 数据表
CY62148BNLL-70SI CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70SXC CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70SXCT CYPRESS

获取价格

暂无描述
CY62148BNLL-70SXI CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70SXIT CYPRESS

获取价格

Standard SRAM, 512KX8, 70ns, CMOS, PDSO32,
CY62148BNLL-70ZC CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70ZI CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70ZRC CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70ZRI CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM
CY62148BNLL-70ZXC CYPRESS

获取价格

4-Mbit (512K x 8) Static RAM