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CY62136CV30LL-55BAI PDF预览

CY62136CV30LL-55BAI

更新时间： 2024-09-27 22:07:51
品牌 Logo 应用领域
赛普拉斯 - CYPRESS /
页数 文件大小 规格书
13页 216K
描述
2M (128K x 16) Static RAM

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CY62136CV30LL-55BAI 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：BGA包装说明：7 X 7 MM, 1.20 MM HEIGHT, FBGA-48
针数：48Reach Compliance Code：not_compliant
ECCN代码：3A991.B.2.AHTS代码：8542.32.00.41
风险等级：5.87最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：S-PBGA-B48
JESD-609代码：e0长度：7 mm
内存密度：2097152 bit内存集成电路类型：STANDARD SRAM
内存宽度：16功能数量：1
端子数量：48字数：131072 words
字数代码：128000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：128KX16输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装等效代码：BGA48,6X8,30封装形状：SQUARE
封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行：PARALLEL
电源：3 V认证状态：Not Qualified
座面最大高度：1.2 mm最大待机电流：0.000006 A
最小待机电流：1.5 V子类别：SRAMs
最大压摆率：0.015 mA最大供电电压 (Vsup)：3.3 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：BALL端子节距：0.75 mm
端子位置：BOTTOM宽度：7 mm
Base Number Matches：1

CY62136CV30LL-55BAI 数据手册

 浏览型号CY62136CV30LL-55BAI的Datasheet PDF文件第2页浏览型号CY62136CV30LL-55BAI的Datasheet PDF文件第3页浏览型号CY62136CV30LL-55BAI的Datasheet PDF文件第4页浏览型号CY62136CV30LL-55BAI的Datasheet PDF文件第5页浏览型号CY62136CV30LL-55BAI的Datasheet PDF文件第6页浏览型号CY62136CV30LL-55BAI的Datasheet PDF文件第7页 
CY62136CV30/33 MoBL  
CY62136CV MoBL  
2M (128K x 16) Static RAM  
This is ideal for providing More Battery Life™ (MoBL®) in  
portable applications such as cellular telephones. The device  
also has an automatic power-down feature that significantly  
reduces power consumption by 80% when addresses are not  
toggling. The device can also be put into standby mode  
reducing power consumption by more than 99% when  
deselected (CE HIGH). The input/output pins (I/O0 through  
Features  
• Very high speed: 55 ns and 70 ns  
• Voltage range:  
— CY62136CV30: 2.7V–3.3V  
— CY62136CV33: 3.0V–3.6V  
— CY62136CV: 2.7V–3.6V  
I/O15) are placed in a high-impedance state when: deselected  
(CE HIGH), outputs are disabled (OE HIGH), both Byte High  
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),  
or during a write operation (CE LOW, and WE LOW).  
• Pin-compatible with the CY62136V  
• Ultra-low active power  
— Typical active current: 1.5 mA @ f = 1 MHz  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
(BLE) is LOW, then data from I/O pins (I/O0 through I/O7), is  
written into the location specified on the address pins (A0  
through A16). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O8 through I/O15) is written into the location  
specified on the address pins (A0 through A16).  
— Typical active current: 5.5 mA @ f = fmax (70-ns  
speed)  
• Low standby power  
• Easy memory expansion with CE and OE features  
• Automatic power-down when deselected  
• CMOS for optimum speed/power  
• Packages offered in a 48-ball FBGA  
Reading from the device is accomplished by taking Chip  
Enable (CE) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the truth table at the back of this data sheet for a complete  
description of read and write modes.  
Functional Description[1]  
The and CY62136CV are high-performance CMOS static  
RAM organized as 128K words by 16 bits. This device features  
advanced circuit design to provide ultra-low active current.  
Logic Block Diagram  
DATA IN DRIVERS  
A
10  
A
9
A
8
7
6
A
A
A
A
A
128K x 16  
5
4
RAM Array  
I/O –I/O  
0
7
2048 x 1024  
3
2
I/O –I/O  
A
8
15  
A
A
1
0
COLUMN DECODER  
BHE  
WE  
CE  
OE  
BLE  
Note:  
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.  
Cypress Semiconductor Corporation  
•
3901 North First Street  
•
San Jose  
•
CA 95134  
•
408-943-2600  
Document #: 38-05199 Rev. *D  
Revised September 20, 2002  
1234567...13

中文翻译

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CY62136CV30LL-55BAI 替代型号

型号 品牌 替代类型 描述 数据表
CY62137CV30LL-55BVI CYPRESS

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