Datasheet > CY62136ESL_1106

CY62136ESL_1106

更新时间： 2024-09-30 12:50:11

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		/
页数	文件大小	规格书
15页	485K
描述
2-Mbit (128 K x 16) Static RAM Ultra low standby power

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CY62136ESL_1106 数据手册

CY62136ESL MoBL^®

2-Mbit (128 K × 16) Static RAM

2-Mbit (128

K × 16) Static RAM

applications such as cellular telephones. The device also has an

automatic power down feature that reduces power consumption

when addresses are not toggling. Placing the device into standby

mode reduces power consumption by more than 99% when

deselected (CE HIGH). The input and output pins (I/O₀through

I/O₁₅) are placed in a high impedance state when the device is

deselected (CE HIGH), the outputs are disabled (OE HIGH),

both Byte High Enable and Byte Low Enable are disabled (BHE,

BLE HIGH) or during a write operation (CE LOW and WE LOW).

Features

■ Very high speed: 45 ns

■ Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V

■ Ultra low standby power

❐ Typical standby current: 1 A

❐ Maximum standby current: 7 A

■ Ultra low active power

❐ Typical active current: 2 mA at f = 1 MHz

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from I/O pins (I/O₀through I/O₇) is written into the location

specified on the address pins (A₀through A₁₆). If Byte High

Enable (BHE) is LOW, then data from I/O pins (I/O₈through

I/O₁₅) is written into the location specified on the address pins

(A₀through A₁₆).

■ Easy memory expansion with CE and OE features

■ Automatic power-down when deselected

■ Complementary metal oxide semiconductor (CMOS) for

optimum speed and power

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appears on I/O₀to I/O₇. If

Byte High Enable (BHE) is LOW, then data from memory

appears on I/O₈to I/O₁₅. See the Truth Table on page 11 for a

complete description of read and write modes.

■ Available in Pb-free 44-pin thin small outline package (TSOP) II

package

Functional Description

The CY62136ESL is a high performance CMOS static RAM

organized as 128K words by 16 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life (MoBL^®) in portable

Logic Block Diagram

DATA IN DRIVERS

A₁₀

A₉

A₈

A₇

A₆

A₅

A₄

A₃

A₂

128 K x 16

RAM Array

I/O₀–I/O₇

I/O₈–I/O₁₅

A₁

A₀

COLUMN DECODER

BHE

BLE

Cypress Semiconductor Corporation

Document #: 001-48147 Rev. *D

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised June 15, 2011

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与CY62136ESL_1106相关器件

型号	品牌	获取价格	描述	数据表
CY62136ESL_13	CYPRESS	获取价格	2-Mbit (128 K x 16) Static RAM
CY62136ESL-45ZSXI	CYPRESS	获取价格	2 Mbit (128K x 16) Static RAM
CY62136ESL-45ZSXI	INFINEON	获取价格	Asynchronous SRAM
CY62136ESL-45ZSXIT	INFINEON	获取价格	Asynchronous SRAM
CY62136EV30	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136EV30_09	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136EV30_11	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136EV30_1106	CYPRESS	获取价格	2-Mbit (128 K x 16) Static RAM Automatic power down when deselected
CY62136EV30LL	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM
CY62136EV30LL-45BVXI	CYPRESS	获取价格	2-Mbit (128K x 16) Static RAM

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