Datasheet > CY14U256LA-BA35XI

CY14U256LA-BA35XI

更新时间： 2024-11-19 01:13:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
22页	499K
描述
256-Kbit (32 K Ã 8) nvSRAM

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中文翻译

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数据手册

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CY14U256LA-BA35XI 数据手册

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CY14U256LA

256-Kbit (32 K × 8) nvSRAM

256-Kbit (32

K × 8) nvSRAM

Features

Functional Description

■ 35 ns access time

The Cypress CY14U256LA is a fast static RAM, with a

nonvolatile element in each memory cell. The memory is

organized as 32 K bytes of 8 bits each. The embedded

nonvolatile elements incorporate QuantumTrap technology,

producing the world’s most reliable nonvolatile memory. The

SRAM provides infinite read and write cycles, while independent

nonvolatile data resides in the highly reliable QuantumTrap cell.

Data transfers from the SRAM to the nonvolatile elements (the

STORE operation) takes place automatically at power down. On

power-up, data is restored to the SRAM (the RECALL operation)

from the nonvolatile memory. Both the STORE and RECALL

operations are also available under software control.

■ Internally organized as 32 K × 8

■ Hands off automatic STORE on power down with only a small

capacitor

■ STORE to QuantumTrap nonvolatile elements initiated by

software, device pin, or AutoStore on power down

■ RECALL to SRAM initiated by software or power up

■ Infinite read, write, and recall cycles

■ 1 million STORE cycles to QuantumTrap

■ 20 year data retention

For a complete list of related documentation, click here.

■ Core V_CC= 2.7 V to 3.6 V; I/O V_CCQ= 1.65 V to 1.95 V

■ Industrial temperature

■ 48-ball fine-pitch ball grid array (FBGA) package

■ Pb-free and restriction of hazardous substances (RoHS)

compliance

Logic Block Diagram

_CCQV

CAP

Quantum Trap

512 X 512

POWER

CONTROL

A₅

STORE

A₆

A₇

A₈

RECALL

STORE/

RECALL

CONTROL

STATIC RAM

ARRAY

512 X 512

HSB

A₉

A₁₁

A₁₂

A₁₃

A₁₄

SOFTWARE

DETECT

A₁₄

A₂

DQ₀

COLUMN I/O

DQ₁

DQ₂

DQ₃

COLUMN DEC

DQ₄

DQ₅

DQ₆

DQ₇

A₀

A₄

A₁₀

A₁

A₃

A₂

Cypress Semiconductor Corporation

Document Number: 001-86200 Rev. *B

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised November 13, 2014

12 3 4 5 6 7...22

中文翻译

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与CY14U256LA-BA35XI相关器件

型号	品牌	获取价格	描述	数据表
CY14U256LA-BA35XIT	CYPRESS	获取价格	256-Kbit (32 K Ã 8) nvSRAM
CY14U256LA-BA35XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101LA	CYPRESS	获取价格	1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles
CY14V101LA-BA25XI	CYPRESS	获取价格	1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles
CY14V101LA-BA25XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101LA-BA25XIT	CYPRESS	获取价格	1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles
CY14V101LA-BA25XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101LA-BA45XI	CYPRESS	获取价格	1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles
CY14V101LA-BA45XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101LA-BA45XIT	CYPRESS	获取价格	1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

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