Datasheet > CY14V101QS-BK108XITR

CY14V101QS-BK108XITR

更新时间： 2023-01-03 00:06:36

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
61页	1301K
描述
Non-Volatile SRAM, 128KX8, CMOS, PBGA24, LEAD FREE, FBGA-24

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技术参数
数据手册

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CY14V101QS-BK108XITR 技术参数

生命周期：	Obsolete	包装说明：	TBGA,
Reach Compliance Code：	compliant	风险等级：	5.74
JESD-30 代码：	R-PBGA-B24	长度：	8 mm
内存密度：	1048576 bit	内存集成电路类型：	NON-VOLATILE SRAM
内存宽度：	8	功能数量：	1
端子数量：	24	字数：	131072 words
字数代码：	128000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	128KX8	封装主体材料：	PLASTIC/EPOXY
封装代码：	TBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, THIN PROFILE	并行/串行：	SERIAL
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	1 mm	端子位置：	BOTTOM
宽度：	6 mm	Base Number Matches：	1

CY14V101QS-BK108XITR 数据手册

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PRELIMINARY

CY14V101QS

1-Mbit (128K × 8) Quad SPI nvSRAM

■ Recall from nonvolatile SONOS FLASH Quantum Trap to

SRAM

Features

■ Density

❐ 1 Mbit (128K × 8)

❐ Auto RECALL: Initiated automatically at power-up

❐ Software: Using SPI instruction (RECALL)

■ Bandwidth

■ Low-power modes

❐ 108-MHz high-speed interface

❐ Read and write at 54 Mbps

❐ Sleep: Average current = 280 µA at 85 °C, 500 µA at 105 °C

❐ Hibernate: Average current = 8 µA at 85 °C, 10 µA at 105 °C

■ Serial Peripheral Interface

❐ Clock polarity and phase modes 0 and 3

■ Operating supply voltages

❐ Core V_CC: 2.7 V to 3.6 V

❐ Multi I/O option – Single SPI (SPI), Dual SPI (DPI), and Quad

❐ I/O V_CCQ: 1.71 V to 2.0 V

SPI (QPI)

■ Temperature range

❐ Extended Industrial: –40 °C to 105 °C

❐ Industrial: –40 °C to 85 °C

■ High reliability

❐ Infinite read, write, and RECALL cycles

❐ One million STORE cycles to nonvolatile elements (SONOS

FLASH Quantum trap)

■ Packages

❐ 16-pin SOIC

❐ 24-ball FBGA

❐ Data retention: 20 years at 85 °C

■ Read

❐ Commands: Normal, Fast, Dual I/O, and Quad I/O

❐ Modes: Burst Wrap, Continuous (XIP)

Functional Overview

■ Write

The Cypress CY14V101QS combines a 1-Mbit nvSRAM in a

monolithic integrated circuit with a QPI interface. The QPI allows

writing and reading the memory in either a single (one I/O

channel for one bit per clock cycle), dual (two I/O channels for

two bits per clock cycle), or quad (four I/O channels for four bits

per clock cycle) through the use of selected opcodes.

❐ Commands: Normal, Fast, Dual I/O, and Quad I/O

❐ Modes: Burst Wrap, Continuous (XIP)

■ Data protection

❐ Hardware: Through Write Protect Pin (WP)

❐ Software: Through Write Disable instruction

❐ Block Protection: Status Register bits to control protection

The memory is organized as 128K words of eight bits each

consisting of SRAM and nonvolatile SONOS FLASH Quantum

Trap cells. The SRAM provides infinite read and write cycles,

while the nonvolatile cells provide highly reliable nonvolatile

storage of data. Data transfers from SRAM to the nonvolatile

cells (STORE operation) take place automatically at

power-down. On power-up, data is restored to the SRAM from

the nonvolatile cells (RECALL operation). You can also initiate

the STORE and RECALL operations through SPI instruction.

■ Special instructions

❐ STORE/RECALL: Access data between SRAM and

Quantum Trap

❐ Serial Number: 8-byte customer selectable (OTP)

❐ Identification Number: 4-byte Manufacturer ID and Product

■ Store from SRAM to nonvolatile SONOS FLASHQuantum Trap

❐ AutoStore: Initiated automatically at power-down with a small

capacitor (V_CAP

)

❐ Software: Using SPI instruction (STORE)

❐ Hardware: HSB pin

Cypress Semiconductor Corporation

Document Number: 001-85257 Rev. *G

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised July 9, 2015

12 3 4 5 6 7...61

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与CY14V101QS-BK108XITR相关器件

型号	品牌	获取价格	描述	数据表
CY14V101QS-BK108XQ	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PBGA24, FBGA-24
CY14V101QS-BK108XQ	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101QS-BK108XQTR	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PBGA24, LEAD FREE, FBGA-24
CY14V101QS-SE108XI	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SE108XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101QS-SE108XIT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SE108XQ	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SE108XQ	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14V101QS-SE108XQT	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, SOIC-16
CY14V101QS-SE108XQTR	CYPRESS	获取价格	Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.413 X 0.299 INCH, 0.0932 INCH HEIGHT, LEAD FREE

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