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CY14ME256J2-SXI

更新时间： 2024-11-18 12:50:27
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
30页 1091K
描述
256-Kbit (32 K × 8) Serial (I2C) nvSRAM

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中文翻译

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CY14ME256J2-SXI 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：SOP, SOP8,.25针数：8
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41Factory Lead Time：1 week
风险等级：5.82Is Samacsys：N
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：4.889 mm内存密度：262144 bit
内存集成电路类型：NON-VOLATILE SRAM内存宽度：8
湿度敏感等级：3功能数量：1
端子数量：8字数：32768 words
字数代码：32000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：32KX8封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
并行/串行：SERIAL峰值回流温度（摄氏度）：260
电源：5 V认证状态：Not Qualified
座面最大高度：1.727 mm最大待机电流：0.00015 A
子类别：SRAMs最大压摆率：0.003 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：20宽度：3.8985 mm
Base Number Matches：1

CY14ME256J2-SXI 数据手册

 浏览型号CY14ME256J2-SXI的Datasheet PDF文件第2页浏览型号CY14ME256J2-SXI的Datasheet PDF文件第3页浏览型号CY14ME256J2-SXI的Datasheet PDF文件第4页浏览型号CY14ME256J2-SXI的Datasheet PDF文件第5页浏览型号CY14ME256J2-SXI的Datasheet PDF文件第6页浏览型号CY14ME256J2-SXI的Datasheet PDF文件第7页 
CY14MC256J  
CY14MB256J  
CY14ME256J  
256-Kbit (32 K × 8) Serial (I2C) nvSRAM  
256-Kbit (32  
K × 8) Serial (I2C) nvSRAM  
■ Industry standard configurations  
❐ Operating voltages:  
Features  
■ 256-Kbit nonvolatile static random access memory (nvSRAM)  
❐ Internally organized as 32 K × 8  
• CY14MC256J: VCC = 2.4 V to 2.6 V  
• CY14MB256J: VCC = 2.7 V to 3.6 V  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by using I2C  
command (SoftwareSTORE) orHSBpin(HardwareSTORE)  
• CY14ME256J: VCC = 4.5 V to 5.5 V  
❐ Industrial temperature  
❐ 8- and 16-pin small outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
❐ RECALL to SRAM initiated on power-up (Power-Up  
RECALL) or by I2C command (Software RECALL)  
Overview  
❐ Automatic STORE on power-down with a small capacitor  
(except for CY14MX256J1)  
The  
Cypress  
CY14MC256J/CY14MB256J/CY14ME256J  
combines a 256-Kbit nvSRAM[1] with a nonvolatile element in  
each memory cell. The memory is organized as 32 K words of  
8 bits each. The embedded nonvolatile elements incorporate the  
QuantumTrap technology, creating the world’s most reliable  
nonvolatile memory. The SRAM provides infinite read and write  
cycles, while the QuantumTrap cells provide highly reliable  
nonvolatile storage of data. Data transfers from SRAM to the  
nonvolatile elements (STORE operation) takes place  
automatically at power-down (except for CY14MX256J1). On  
power-up, data is restored to the SRAM from the nonvolatile  
memory (RECALL operation). The STORE and RECALL  
operations can also be initiated by the user through I2C  
commands.  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1 million STORE cycles to QuantumTrap  
❐ Data retention: 20 years at 85 C  
■ High speed I2C interface  
❐ Industry standard 100 kHz and 400 kHz speed  
❐ Fast-mode Plus: 1 MHz speed  
❐ High speed: 3.4 MHz  
❐ Zero cycle delay reads and writes  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software block protection for one quarter, half, or entire array  
■ I2C access to special functions  
❐ Nonvolatile STORE/RECALL  
❐ 8 byte serial number  
❐ Manufacturer ID and Product ID  
❐ Sleep mode  
Configuration  
Feature  
AutoStore  
CY14MX256J1 CY14MX256J2 CY14MX256J3  
No  
Yes  
Yes  
Yes  
Yes  
Software  
STORE  
Yes  
Hardware  
STORE  
No  
No  
Yes  
■ Low power consumption  
❐ Average active current of 1 mA at 3.4-MHz operation  
❐ Average standby mode current of 150 µA  
❐ Sleep mode current of 8 µA  
Slave Address  
pins  
A2, A1, A0  
A2, A1  
A2, A1, A0  
Logic Block Diagram  
Serial Number  
8 x 8  
VCC VCAP  
Manufacturer ID /  
Product ID  
Power Control  
Memory Control Register  
Command Register  
Block  
QuantumTrap  
32 K x 8  
Sleep  
STORE  
SRAM  
32 K x 8  
Control Registers Slave  
Memory Slave  
SDA  
SCL  
A2, A1, A0  
WP  
I2C Control Logic  
Slave Address  
Decoder  
Memory  
Address and Data  
Control  
RECALL  
Note  
1. Serial (I C) nvSRAM is referred to as nvSRAM throughout the datasheet.  
2
Cypress Semiconductor Corporation  
Document Number: 001-65233 Rev. *D  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised July 25, 2012  
1234567...30

中文翻译

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CY14U256LA-BA35XIT CYPRESS

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 		256-Kbit (32 K × 8) nvSRAM
CY14U256LA-BA35XIT INFINEON

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 		nvSRAM (non-volatile SRAM)
CY14V101LA CYPRESS

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 		1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles
CY14V101LA-BA25XI CYPRESS

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 		1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles
CY14V101LA-BA25XI INFINEON

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 		nvSRAM (non-volatile SRAM)
CY14V101LA-BA25XIT CYPRESS

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 		1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles

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