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CY14C101Q3A-SF104XIT PDF预览

CY14C101Q3A-SF104XIT

更新时间： 2024-11-06 19:09:07
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
34页 1496K
描述
Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16

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CY14C101Q3A-SF104XIT 技术参数

是否Rohs认证： 符合生命周期：Active
零件包装代码：SOIC包装说明：SOP, SOP16,.4
针数：16Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.32.00.41
风险等级：5.74JESD-30 代码：R-PDSO-G16
JESD-609代码：e3长度：10.2865 mm
内存密度：1048576 bit内存集成电路类型：NON-VOLATILE SRAM
内存宽度：8湿度敏感等级：3
功能数量：1端子数量：16
字数：131072 words字数代码：128000
工作模式：SYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：128KX8
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP16,.4封装形状：RECTANGULAR
封装形式：SMALL OUTLINE并行/串行：SERIAL
峰值回流温度（摄氏度）：260电源：2.5 V
认证状态：Not Qualified座面最大高度：2.667 mm
最大待机电流：0.00015 A子类别：SRAMs
最大压摆率：0.003 mA最大供电电压 (Vsup)：2.6 V
最小供电电压 (Vsup)：2.4 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：MATTE TIN
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：40
宽度：7.4925 mmBase Number Matches：1

CY14C101Q3A-SF104XIT 数据手册

 浏览型号CY14C101Q3A-SF104XIT的Datasheet PDF文件第2页浏览型号CY14C101Q3A-SF104XIT的Datasheet PDF文件第3页浏览型号CY14C101Q3A-SF104XIT的Datasheet PDF文件第4页浏览型号CY14C101Q3A-SF104XIT的Datasheet PDF文件第5页浏览型号CY14C101Q3A-SF104XIT的Datasheet PDF文件第6页浏览型号CY14C101Q3A-SF104XIT的Datasheet PDF文件第7页 
CY14C101Q  
PRELIMINARY  
CY14B101Q, CY14E101Q  
1-Mbit (128 K × 8) Serial (SPI) nvSRAM  
1-Mbit (128  
K × 8) Serial (SPI) nvSRAM  
■ Industry standard configurations  
❐ Operating voltages:  
Features  
■ 1-Mbit nonvolatile static random access memory (nvSRAM)  
internally organized as 128 K × 8  
❐ STORE to QuantumTrap nonvolatile elements initiated  
automatically on power-down (AutoStore) or by using SPI  
instruction (Software STORE) or HSB pin (Hardware  
STORE)  
• CY14C101Q: VCC = 2.4 V to 2.6 V  
• CY14B101Q: VCC = 2.7 V to 3.6 V  
• CY14E101Q: VCC = 4.5 V to 5.5 V  
❐ Industrial temperature  
❐ 8- and 16-pin small outline integrated circuit (SOIC) package  
❐ Restriction of hazardous substances (RoHS) compliant  
❐ RECALL to SRAM initiated on power-up (Power-Up  
RECALL) or by SPI instruction (Software RECALL)  
❐ Support automatic STORE on power-down with a small  
capacitor (except for CY14X101Q1A)  
Functional Overview  
The Cypress CY14X101Q combines a 1-Mbit nvSRAM with a  
nonvolatile element in each memory cell with serial SPI interface.  
The memory is organized as 128 K words of 8 bits each. The  
embedded nonvolatile elements incorporate the QuantumTrap  
technology, creating the world’s most reliable nonvolatile  
memory. The SRAM provides infinite read and write cycles, while  
the QuantumTrap cells provide highly reliable nonvolatile  
storage of data. Data transfers from SRAM to the nonvolatile  
elements (STORE operation) takes place automatically at  
power-down (except for CY14X101Q1A). On power-up, data is  
restored to the SRAM from the nonvolatile memory (RECALL  
operation). You can also initiate the STORE and RECALL  
operations through SPI instruction.  
■ High reliability  
❐ Infinite read, write, and RECALL cycles  
❐ 1million STORE cycles to QuantumTrap  
❐ Data retention: 20 years at 85 °C  
■ 40 MHz, and 104 MHz High-speed serial peripheral interface  
(SPI)  
❐ 40-MHz clock rate SPI write and read with zero cycle delay  
❐ 104-MHz clock rate SPI write and SPI read (with special fast  
read instructions)  
❐ Supports SPI mode 0 (0,0) and mode 3 (1,1)  
■ SPI access to special functions  
❐ Nonvolatile STORE/RECALL  
❐ 8-byte serial number  
❐ Manufacturer ID and Product ID  
❐ Sleep mode  
■ Write protection  
❐ Hardware protection using Write Protect (WP) pin  
❐ Software protection using Write Disable instruction  
❐ Software block protection for 1/4, 1/2, or entire array  
■ Low power consumption  
Configuration  
Feature  
CY14X101Q1A CY14X101Q2A CY14X101Q3A  
AutoStore  
No  
Yes  
Yes  
Yes  
Yes  
Software  
STORE  
Yes  
Hardware  
STORE  
No  
No  
Yes  
❐ Average active current of 3 mA at 40 MHz operation  
❐ Average standby mode current of 150 A  
❐ Sleep mode current of 8 A  
Logic Block Diagram  
Serial Number  
8 x 8  
Manufacture ID/  
Product ID  
Status Register  
Quantrum Trap  
128 K x 8  
WRSR/RDSR/WREN  
RDSN/WRSN/RDID  
STORE  
SRAM  
128 K x 8  
SI  
CS  
Memory  
Data & Address  
Control  
RECALL  
READ/WRITE  
SPI Control Logic  
Write Protection  
STORE/RECALL/ASENB/ASDISB  
SCK  
Instruction decoder  
WP  
SO  
VCC  
VCAP  
SLEEP  
Power Control  
Block  
Cypress Semiconductor Corporation  
Document #: 001-54393 Rev. *E  
•
198 Champion Court  
•
San Jose, CA 95134-1709  
•
408-943-2600  
Revised April 6, 2011  
[+] Feedback  
1234567...34

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CY14C101Q3A-SFXI CYPRESS

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 		Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16
CY14C101Q3A-SFXIT CYPRESS

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 		Non-Volatile SRAM, 128KX8, CMOS, PDSO16, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16
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CY14C256PA CYPRESS

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 		256-Kbit (32 K x 8) SPI nvSRAM with Real Time Clock Infinite read, write, and RECALL cycle
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CY14C256PA_13 CYPRESS

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 		256-Kbit (32 K x 8) SPI nvSRAM with Real Time Clock
CY14C256Q CYPRESS

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 		256-Kbit (32 K x 8) SPI nvSRAM Infinite read, write, and RECALL cycles
CY14C256Q_12 CYPRESS

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 		256-Kbit (32 K × 8) SPI nvSRAM

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