Datasheet > CY14B256LA_11

CY14B256LA_11

更新时间： 2024-11-06 09:41:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
22页	772K
描述
256-Kbit (32 K × 8) nvSRAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

CY14B256LA_11 数据手册

CY14B256LA

256-Kbit (32 K × 8) nvSRAM

256 Kbit (32K

x 8) nvSRAM

Features

Functional Description

■ 25 ns and 45 ns access times

The Cypress CY14B256LA is a fast static RAM, with a

nonvolatile element in each memory cell. The memory is

organized as 32 K bytes of 8 bits each. The embedded

nonvolatile elements incorporate QuantumTrap technology,

producing the world’s most reliable nonvolatile memory. The

SRAM provides infinite read and write cycles, while independent

nonvolatile data resides in the highly reliable QuantumTrap cell.

Data transfers from the SRAM to the nonvolatile elements (the

STORE operation) takes place automatically at power-down. On

power-up, data is restored to the SRAM (the RECALL operation)

from the nonvolatile memory. Both the STORE and RECALL

operations are also available under software control.

■ Internally organized as 32 K × 8 (CY14B256LA)

■ Hands off automatic STORE on power-down with only a small

capacitor

■ STORE to QuantumTrap nonvolatile elements initiated by

software, device pin, or AutoStore on power-down

■ RECALL to SRAM initiated by software or power-up

■ Infinite read, write, and recall cycles

■ 1 million STORE cycles to QuantumTrap

■ 20-year data retention

■ Single 3 V +20% to –10% operation

■ Industrial temperature

■ 44-pin thin small outline package (TSOP) - II, 48-pin shrunk

small outline package (SSOP), and 32-pin small-outline

integrated circuit (SOIC) packages

■ Pb-free and restriction of hazardous substances (RoHS)

compliance

Logic Block Diagram

CAP

Quantum Trap

512 X 512

POWER

CONTROL

A₅

STORE

A₆

A₇

A₈

RECALL

STORE/

RECALL

CONTROL

STATIC RAM

ARRAY

512 X 512

HSB

A₉

A₁₁

A₁₂

A₁₃

A₁₄

SOFTWARE

DETECT

A₁₃

A₀

COLUMN I/O

DQ₀

DQ₁

DQ₂

DQ₃

COLUMN DEC

DQ₄

DQ₅

DQ₆

DQ₇

A₀

A₄

A₁₀

A₁

A₃

A₂

Cypress Semiconductor Corporation

Document Number: 001-54707 Rev. *F

•

198 Champion Court

•

San Jose, CA 95134-1709

•

408-943-2600

Revised January 20, 2011

[+] Feedback

12 3 4 5 6 7...22

中文翻译

下载PDF

与CY14B256LA_11相关器件

型号	品牌	获取价格	描述	数据表
CY14B256LA_12	CYPRESS	获取价格	256-Kbit (32 K Ã 8) nvSRAM
CY14B256LA-SP25XI	CYPRESS	获取价格	256 Kbit (32K x 8) nvSRAM
CY14B256LA-SP25XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B256LA-SP25XIT	CYPRESS	获取价格	256 Kbit (32K x 8) nvSRAM
CY14B256LA-SP25XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B256LA-SP45XI	CYPRESS	获取价格	256 Kbit (32K x 8) nvSRAM
CY14B256LA-SP45XI	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B256LA-SP45XIT	CYPRESS	获取价格	256 Kbit (32K x 8) nvSRAM
CY14B256LA-SP45XIT	INFINEON	获取价格	nvSRAM (non-volatile SRAM)
CY14B256LA-SZ25XI	CYPRESS	获取价格	256 Kbit (32K x 8) nvSRAM