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CY14B256LA-SZ25XIT PDF预览

CY14B256LA-SZ25XIT

更新时间: 2024-11-19 06:51:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 存储内存集成电路静态存储器光电二极管
页数 文件大小 规格书
21页 631K
描述
256 Kbit (32K x 8) nvSRAM

CY14B256LA-SZ25XIT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:SOP, SOP32,.4针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:1.3
Is Samacsys:N最长访问时间:25 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:20.726 mm内存密度:262144 bit
内存集成电路类型:NON-VOLATILE SRAM内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP32,.4
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V认证状态:Not Qualified
座面最大高度:2.54 mm最大待机电流:0.005 A
子类别:SRAMs最大压摆率:0.07 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:7.505 mm
Base Number Matches:1

CY14B256LA-SZ25XIT 数据手册

 浏览型号CY14B256LA-SZ25XIT的Datasheet PDF文件第2页浏览型号CY14B256LA-SZ25XIT的Datasheet PDF文件第3页浏览型号CY14B256LA-SZ25XIT的Datasheet PDF文件第4页浏览型号CY14B256LA-SZ25XIT的Datasheet PDF文件第5页浏览型号CY14B256LA-SZ25XIT的Datasheet PDF文件第6页浏览型号CY14B256LA-SZ25XIT的Datasheet PDF文件第7页 
CY14B256LA  
256 Kbit (32K x 8) nvSRAM  
Features  
Functional Description  
25 ns and 45 ns Access Times  
The Cypress CY14B256LA is a fast static RAM, with a nonvol-  
atile element in each memory cell. The memory is organized as  
32K bytes of 8 bits each. The embedded nonvolatile elements  
incorporate QuantumTrap technology, producing the world’s  
most reliable nonvolatile memory. The SRAM provides infinite  
read and write cycles, while independent nonvolatile data  
resides in the highly reliable QuantumTrap cell. Data transfers  
from the SRAM to the nonvolatile elements (the STORE  
operation) takes place automatically at power down. On power  
up, data is restored to the SRAM (the RECALL operation) from  
the nonvolatile memory. Both the STORE and RECALL opera-  
tions are also available under software control.  
Internally Organized as 32K x 8 (CY14B256LA)  
Hands off Automatic STORE on Power Down with only a Small  
Capacitor  
STORE to QuantumTrap Nonvolatile Elements Initiated by  
Software, Device Pin, or AutoStore on Power Down  
RECALL to SRAM Initiated by Software or Power Up  
Infinite Read, Write, and Recall Cycles  
1 Million STORE Cycles to QuantumTrap  
20 year Data Retention  
Single 3V +20% to -10% Operation  
Industrial Temperature  
44-Pin TSOP - II, 48-Pin SSOP, and 32-Pin SOIC Packages  
Pb-free and RoHS Compliance  
Cypress Semiconductor Corporation  
Document Number: 001-54707 Rev. *B  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised December 08, 2009  
[+] Feedback  

CY14B256LA-SZ25XIT 替代型号

型号 品牌 替代类型 描述 数据表
STK14D88-NF25 CYPRESS

完全替代

Non-Volatile SRAM, 32KX8, 25ns, CMOS, PDSO32, 0.300 INCH, 0.050 INCH PITCH, ROHS COMPLIANT
CY14B256LA-SZ25XI CYPRESS

完全替代

256 Kbit (32K x 8) nvSRAM
STK14D88-N25I CYPRESS

功能相似

32KX8 NON-VOLATILE SRAM, 25ns, PDSO32, 0.300 INCH, 0.50 INCH PITCH, PLASTIC, SOIC-32

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