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CY14B256LA-ZS45XI PDF预览

CY14B256LA-ZS45XI

更新时间: 2024-11-05 06:51:31
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器
页数 文件大小 规格书
21页 631K
描述
256 Kbit (32K x 8) nvSRAM

CY14B256LA-ZS45XI 数据手册

 浏览型号CY14B256LA-ZS45XI的Datasheet PDF文件第2页浏览型号CY14B256LA-ZS45XI的Datasheet PDF文件第3页浏览型号CY14B256LA-ZS45XI的Datasheet PDF文件第4页浏览型号CY14B256LA-ZS45XI的Datasheet PDF文件第5页浏览型号CY14B256LA-ZS45XI的Datasheet PDF文件第6页浏览型号CY14B256LA-ZS45XI的Datasheet PDF文件第7页 
CY14B256LA  
256 Kbit (32K x 8) nvSRAM  
Features  
Functional Description  
25 ns and 45 ns Access Times  
The Cypress CY14B256LA is a fast static RAM, with a nonvol-  
atile element in each memory cell. The memory is organized as  
32K bytes of 8 bits each. The embedded nonvolatile elements  
incorporate QuantumTrap technology, producing the world’s  
most reliable nonvolatile memory. The SRAM provides infinite  
read and write cycles, while independent nonvolatile data  
resides in the highly reliable QuantumTrap cell. Data transfers  
from the SRAM to the nonvolatile elements (the STORE  
operation) takes place automatically at power down. On power  
up, data is restored to the SRAM (the RECALL operation) from  
the nonvolatile memory. Both the STORE and RECALL opera-  
tions are also available under software control.  
Internally Organized as 32K x 8 (CY14B256LA)  
Hands off Automatic STORE on Power Down with only a Small  
Capacitor  
STORE to QuantumTrap Nonvolatile Elements Initiated by  
Software, Device Pin, or AutoStore on Power Down  
RECALL to SRAM Initiated by Software or Power Up  
Infinite Read, Write, and Recall Cycles  
1 Million STORE Cycles to QuantumTrap  
20 year Data Retention  
Single 3V +20% to -10% Operation  
Industrial Temperature  
44-Pin TSOP - II, 48-Pin SSOP, and 32-Pin SOIC Packages  
Pb-free and RoHS Compliance  
Cypress Semiconductor Corporation  
Document Number: 001-54707 Rev. *B  
198 Champion Court  
San Jose  
,
CA 95134-1709  
408-943-2600  
Revised December 08, 2009  
[+] Feedback  

CY14B256LA-ZS45XI 替代型号

型号 品牌 替代类型 描述 数据表
CY14B256LA-ZS45XIT CYPRESS

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