PRELIMINARY
CY14B256L
256-Kbit (32K x 8) nvSRAM
Features
Functional Description
• 25 ns, 35 ns, and 45 ns access times
The Cypress CY14B256L is a fast static RAM with a nonvol-
atile element in each memory cell. The embedded nonvolatile
elements incorporate QuantumTrap technology producing the
world’s most reliable nonvolatile memory. The SRAM provides
infinite read and write cycles while independent, nonvolatile
data resides in the highly reliable QuantumTrap cell. Data
transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power down.
On power up, data is restored to the SRAM (the RECALL
operation) from the nonvolatile memory. The STORE and
RECALL operations are also available under software control.
• “Hands-off” automatic STORE on power down with only a
small capacitor
• STORE to QuantumTrap™ nonvolatile elements is initiated
by software, device pin, or AutoStore™ on power down
• RECALL to SRAM initiated by software or power up
• Infinite READ, WRITE, and RECALL cycles
• 10 mA typical ICC at 200 ns cycle time
• 200,000 STORE cycles to QuantumTrap
• 20-year data retention @ 55°C
• Single 3V operation with tolerance of +15%, –10%
• Commercial and industrial temperature
• SOIC and SSOP packages
• RoHS compliance
Logic Block Diagram
V
CC
V
CAP
QuantumTrap
512 X 512
POWER
CONTROL
A5
STORE
A6
A7
A8
RECALL
STORE/
RECALL
CONTROL
STATIC RAM
ARRAY
512 X 512
HSB
A9
A11
A12
A13
A14
SOFTWARE
DETECT
A13
-
A0
DQ0
COLUMN IO
DQ1
DQ2
DQ3
COLUMN DEC
DQ4
DQ5
DQ6
DQ7
A0
A4
A10
A1
A3
A2
OE
CE
WE
Cypress Semiconductor Corporation
Document #: 001-06422 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 27, 2007
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