Datasheet > CSD16406Q3

CSD16406Q3

更新时间： 2024-09-25 12:55:15

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德州仪器 - TI		/
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描述
N-Channel NexFETâ¢ Power MOSFETs

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CSD16406Q3 数据手册

CSD16406Q3

www.ti.com

SLPS202A –AUGUST 2009–REVISED SEPTEMBER 2010

N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD16406Q3

FEATURES

PRODUCT SUMMARY

•

Ultra Low Qg and Qgd

Low Thermal Resistance

Avalanche Rated

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

5.8

1.5

mΩ

Q_gd

Pb Free Terminal Plating

RoHS Compliant

V_GS= 4.5V

V_GS= 10V

1.8

5.9

4.2

R_DS(on)Drain to Source On Resistance

V_thThreshold Voltage

Halogen Free

SON 3.3mm x 3.3mm Plastic Package

ORDERING INFORMATION

Device

CSD16406Q3

Package

Media

Qty

Ship

APPLICATIONS

SON 3.3 × 3.3

Plastic Package

13-inch

reel

Tape and

Reel

2500

•

Point-of-Load Synchronous Buck Converter

for Applications in Networking, Telecom and

Computing Systems

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C unless otherwise stated

•

Optimized for Control or Synchronous FET

Applications

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

Gate to Source Voltage

+16 / –12

DESCRIPTION

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

I_D

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications.

I_DM

P_D

T_J,

114

2.7

Top View

Operating Junction and Storage

–55 to 150

101

°C

T_STGTemperature Range

Avalanche Energy, single pulse

I_D= 45A, L = 0.1mH, R_G= 25Ω

E_AS

(1) R_qJA= 46°C/W on 1in²Cu (2 oz.) on 0.060" thick FR4 PCB.

(2) Pulse width ≤300ms, duty cycle ≤2%

P0095-01

R_DS(ON)vs V_GS

Gate Charge

= 20A

= 12.5V

= 125°C

= 25°C

Q − Gate Charge − nC

− Gate to Source Voltage − V

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...11

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CSD16406Q3 替代型号

型号	品牌	替代类型	描述	数据表
CSD16323Q3	TI	类似代替	N-Channel NexFETâ¢ Power MOSFETs
CSD16340Q3	TI	类似代替	N-Channel NexFET™ Power MOSFETs
CSD16322Q5	TI	类似代替	N-Channel NexFET Power MOSFET

与CSD16406Q3相关器件

型号	品牌	获取价格	描述	数据表
CSD16406Q3_15	TI	获取价格	N-Channel NexFET Power MOSFET
CSD16407Q5	TI	获取价格	N-Channel NexFETâ¢ Power MOSFETs
CSD16407Q5C	TI	获取价格	DualCool™ N-Channel NexFET™ Power MOSFET
CSD16407Q5C_10	TI	获取价格	ID The NexFETâ¢ power MOSFET has been design
CSD16408Q5	TI	获取价格	N-Channel NexFET Power MOSFET
CSD16408Q5_11	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD16408Q5C	TI	获取价格	DualCool? N-Ch NexFET? Power MOSFET
CSD16408Q5C_10	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD16409Q3	UNITPOWER	获取价格	3A Ultra Low Dropout Linear Regulator
CSD16409Q3	TI	获取价格	N-Channel NexFETâ¢ Power MOSFETs

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