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CSD16322Q5 PDF预览

CSD16322Q5

更新时间: 2024-11-13 06:49:31
品牌 Logo 应用领域
德州仪器 - TI 晶体晶体管功率场效应晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
10页 277K
描述
N-Channel NexFET Power MOSFET

CSD16322Q5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-N5
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:6 weeks风险等级:1.11
其他特性:AVALANCHE RATED雪崩能效等级(Eas):125 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:25 V最大漏极电流 (Abs) (ID):97 A
最大漏极电流 (ID):21 A最大漏源导通电阻:0.007 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):70 pF
JESD-30 代码:R-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.1 W
最大脉冲漏极电流 (IDM):136 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:NO LEAD
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

CSD16322Q5 数据手册

 浏览型号CSD16322Q5的Datasheet PDF文件第2页浏览型号CSD16322Q5的Datasheet PDF文件第3页浏览型号CSD16322Q5的Datasheet PDF文件第4页浏览型号CSD16322Q5的Datasheet PDF文件第5页浏览型号CSD16322Q5的Datasheet PDF文件第6页浏览型号CSD16322Q5的Datasheet PDF文件第7页 
CSD16322Q5  
www.ti.com ................................................................................................................................................................................................. SLPS219AUGUST 2009  
N-Channel NexFET™ Power MOSFET  
PRODUCT SUMMARY  
1
FEATURES  
VDS  
Qg  
Drain to Source Voltage  
Gate Charge Total (4.5V)  
Gate Charge Gate to Drain  
25  
6.8  
1.3  
V
2
Optimized for 5V Gate Drive  
nC  
nC  
m  
mΩ  
mΩ  
V
Ultralow Qg and Qgd  
Qgd  
Low Thermal Resistance  
Avalanche Rated  
VGS = 3V  
5.4  
4.6  
3.9  
RDS(on) Drain to Source On Resistance  
VGS = 4.5V  
VGS = 8V  
Pb Free Terminal Plating  
RoHS Compliant  
VGS(th)  
Threshold Voltage  
1.1  
Halogen Free  
Text and br Added for Spacing  
SON 5-mm × 6-mm Plastic Package  
ORDERING INFORMATION  
Device  
CSD16322Q5  
Package  
Media  
Qty  
Ship  
APPLICATIONS  
SON 5-mm × 6-mm  
Plastic Package  
13-Inch  
Reel  
Tape and  
Reel  
2500  
Point-of-Load Synchronous Buck in  
Networking, Telecom and Computing Systems  
Synchronous or Control FET Applications  
Text and br Added for Spacing  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
TA = 25°C unless otherwise stated  
VALUE  
25  
UNIT  
V
The NexFET™ power MOSFET has been designed  
to minimize losses in power conversion applications  
and optimized for 5V gate drive applications.  
VDS  
VGS  
Drain to Source Voltage  
Gate to Source Voltage  
+10 / –8  
97  
V
Continuous Drain Current, TC = 25°C  
Continuous Drain Current(1)  
Pulsed Drain Current, TA = 25°C(2)  
Power Dissipation(1)  
A
ID  
21  
A
Top View  
IDM  
PD  
TJ,  
136  
A
3.1  
W
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
Operating Junction and Storage  
TSTG Temperature Range  
–55 to 150  
125  
°C  
Avalanche Energy, single pulse  
ID = 50A, L = 0.1mH, RG = 25Ω  
EAS  
mJ  
D
(1)  
R
θJA = 39°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick)  
Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.  
(2) Pulse duration 300µs, duty cycle 2%  
D
P0094-01  
RDS(on) vs VGS  
GATE CHARGE  
12  
11  
10  
10  
I
= 20A  
D
I
= 20A  
D
9
8
7
6
5
4
3
V
= 12.5V  
DS  
9
8
7
6
5
4
T
= 125°C  
C
T
2
= 25°C  
3
2
1
0
C
2
1
0
0
1
3
4
5
6
7
8
9
10  
0
2
4
6
8
10  
12  
14  
Qg − Gate Charge − nC  
G003  
V
− Gate to Source Voltage − V  
GS  
G006  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NexFET is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009, Texas Instruments Incorporated  

CSD16322Q5 替代型号

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