Datasheet > CSD16404Q5A

CSD16404Q5A

更新时间： 2024-09-25 09:33:51

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
11页	510K
描述
N-Channel NexFET? Power MOSFET

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中文翻译

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数据手册
替代型号

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CSD16404Q5A 数据手册

CSD16404Q5A

www.ti.com

SLPS198B –AUGUST 2009–REVISED APRIL 2010

N-Channel NexFET™ Power MOSFET

Check for Samples: CSD16404Q5A

FEATURES

PRODUCT SUMMARY

•

Ultralow Q_gand Q_gd

Low Thermal Resistance

Avalanche Rated

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

6.5

1.7

mΩ

Q_gd

Pb Free Terminal Plating

RoHS Compliant

V_GS= 4.5V

V_GS= 10V

1.8

5.7

4.1

R_DS(on)Drain to Source On Resistance

V_GS(th)Threshold Voltage

Halogen Free

SON 5-mm × 6-mm Plastic Package

ORDERING INFORMATION

Device

CSD16404Q5A

Package

Media

Qty

Ship

APPLICATIONS

SON 5-mm × 6-mm

Plastic Package

13-Inch

Reel

Tape and

Reel

2500

•

Point-of-Load Synchronous Buck Converter

for Applications in Networking, Telecom and

Computing Systems

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C unless otherwise stated

•

Optimized for Control FET Applications

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

DESCRIPTION

Gate to Source Voltage

+16 / –12

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications.

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

135

I_D

I_DM

P_D

T_J,

Top View

Operating Junction and Storage

T_STGTemperature Range

–55 to 150

°C

Avalanche Energy, single pulse

I_D= 40A, L = 0.1mH, R_G= 25Ω

E_AS

(1) R_qJA= 41°C/W on 1-inch²(6.45-cm²), 2-oz. (0.071-mm thick)

Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.

(2) Pulse duration ≤300ms, duty cycle ≤2%

P0093-01

R_DS(on)vs V_GS

GATE CHARGE

= 20A

= 12.5V

= 125°C

= 25°C

− Gate to Source Voltage − V

Q − Gate Charge − nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7...11

中文翻译

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CSD16404Q5A 替代型号

型号	品牌	替代类型	描述	数据表
CSD16342Q5A	TI	类似代替	N-Channel NexFET? Power MOSFETs
CSD16406Q3	TI	功能相似	N-Channel NexFETâ¢ Power MOSFETs
CSD16340Q3	TI	功能相似	N-Channel NexFET™ Power MOSFETs

与CSD16404Q5A相关器件

型号	品牌	获取价格	描述	数据表
CSD16406Q3	TI	获取价格	N-Channel NexFETâ¢ Power MOSFETs
CSD16406Q3_15	TI	获取价格	N-Channel NexFET Power MOSFET
CSD16407Q5	TI	获取价格	N-Channel NexFETâ¢ Power MOSFETs
CSD16407Q5C	TI	获取价格	DualCool™ N-Channel NexFET™ Power MOSFET
CSD16407Q5C_10	TI	获取价格	ID The NexFETâ¢ power MOSFET has been design
CSD16408Q5	TI	获取价格	N-Channel NexFET Power MOSFET
CSD16408Q5_11	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD16408Q5C	TI	获取价格	DualCool? N-Ch NexFET? Power MOSFET
CSD16408Q5C_10	TI	获取价格	The NexFET power MOSFET has been designed to minimize losses in power conversion applicati
CSD16409Q3	UNITPOWER	获取价格	3A Ultra Low Dropout Linear Regulator

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