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CSD16408Q5_11

更新时间： 2024-09-25 12:51:23
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德州仪器 - TI /
页数 文件大小 规格书
11页 323K
描述
The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

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CSD16408Q5_11 数据手册

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CSD16408Q5  
www.ti.com  
SLPS228A –OCTOBER 2009–REVISED SEPTEMBER 2010  
N-Channel NexFET™ Power MOSFET  
1
FEATURES  
PRODUCT SUMMARY  
Drain-to-source voltage  
2
•
•
•
•
Ultralow Qg and Qgd  
VDS  
Qg  
25  
6.7  
1.9  
V
Low Thermal Resistance  
Avalanche Rated  
Gate charge, total (4.5 V)  
Gate charge, gate-to-drain  
nC  
nC  
mΩ  
mΩ  
V
Qgd  
SON 5-mm × 6-mm Plastic Package  
VGS = 4.5 V  
VGS = 10 V  
1.8  
5.4  
3.6  
rDS(on)  
VGS(th)  
Drain-to-source on-resistance  
Threshold voltage  
APPLICATIONS  
•
Point-of-Load Synchronous Buck in  
Networking, Telecom and Computing Systems  
ORDERING INFORMATION  
•
Optimized for Control FET Applications  
Device  
CSD16408Q5  
Package  
Media  
Qty  
Ship  
SON 5-mm × 6-mm  
plastic package  
13-inch  
(33-cm)  
reel  
Tape and  
reel  
2500  
DESCRIPTION  
The NexFET™ power MOSFET has been designed  
to minimize losses in power conversion applications.  
ABSOLUTE MAXIMUM RATINGS  
TA = 25°C unless otherwise stated  
VALUE  
UNIT  
V
Top View  
VDS  
VGS  
Drain-to-source voltage  
25  
Gate-to-source voltage  
–12 to 16  
113  
V
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
Continuous drain current, TC = 25°C  
Continuous drain current(1)  
Pulsed drain current, TA = 25°C(2)  
Power dissipation(1)  
A
ID  
22  
A
IDM  
PD  
TJ,  
141  
A
3.1  
W
Operating junction and storage temperature  
–55 to 150  
126  
°C  
TSTG range  
D
D
Avalanche energy, single-pulse  
ID = 23 A, L = 0.1 mH, RG = 25 Ω  
EAS  
mJ  
P0094-01  
(1) Typical RqJA = 41°C/W on 1-inch2 (6.45-cm2), 2-oz.  
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4  
PCB.  
(2) Pulse duration ≤300 ms, duty cycle ≤2%  
put a break here is force notes closer to the table  
put a break here is force notes closer to the table  
rDS(on) vs VGS  
GATE CHARGE  
16  
14  
12  
10  
8
12  
I
V
= 25A  
I
D
= 25A  
D
= 12.5V  
DS  
10  
8
T
= 125°C  
C
6
6
4
4
2
2
T
= 25°C  
C
0
0
0
2
4
6
8
10  
12  
0
5
10  
15  
20  
V
GS  
− Gate to Source Voltage − V  
Q
− Gate Charge − nC  
g
G006  
G003  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
NexFET is a trademark of Texas Instruments.  
2
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2009–2010, Texas Instruments Incorporated  
 
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