Datasheet > CSB1058B

CSB1058B

更新时间： 2024-11-09 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	61K
描述
TRANSISTOR \| BJT \| PNP \| 16V V(BR)CEO \| 2A I(C) \| TO-92

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中文翻译

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数据手册

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CSB1058B 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP EPITAXIAL PLANAR SILICON TRANSISTOR

CSB1058

TO-92

BCE

Low Frequency Power Amplifier.

Complementary CSD1489

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

BVCBO

BVCEO

BVEBO

VALUE

UNIT

Collector -Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

6.0

2.0

Collector Power Dissipation

Operating And Storage Junction

Temperature Range

Tj, Tstg

0.75

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

6.0

TYP

MAX

2.0

0.2

400

UNIT

Collector -Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE *

IC=10uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=16V, IE=0

VEB=6V, IC=0

VCE=2V, IC=0.1A

VCE=2V, IC=2A

100

Collector Emitter Saturation Voltage

Dynamic Characteristics

VCE(Sat) IC=1A, IB=0.1A

0.3

Transition Frequency

Collector Output Capacitance

Cob

VCE=2V, IC=10mA,

VCB=10V, IE=0

f=1MHz

MHz

hFE* Classification :

A 100-240;

B 200-400;

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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