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CSB1065 PDF预览

CSB1065

更新时间: 2024-11-10 03:26:59
品牌 Logo 应用领域
CDIL 晶体晶体管
页数 文件大小 规格书
3页 138K
描述
PNP PLASTIC POWER TRANSISTOR

CSB1065 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.71
外壳连接:ISOLATED最大集电极电流 (IC):3 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):56JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):70 MHzBase Number Matches:1

CSB1065 数据手册

 浏览型号CSB1065的Datasheet PDF文件第2页浏览型号CSB1065的Datasheet PDF文件第3页 
Continental Device India Limited  
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company  
PNP PLASTIC POWER TRANSISTOR  
CSB1065  
TO126  
Plastic Package  
E
C
B
Complementary CSD1506  
Low Frequency Power Amplifier  
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
Collector Base Voltage(open emitter)  
Collector Emitter Voltage (open base)  
>60  
>50  
V
V
Emitter Base Voltage(open collector)  
Collector Current (DC)  
>5.0  
<3.0  
V
A
IC  
Collector Current (Pulse) (1)  
Total Power Dissipation@ Tc=25°C  
Total Power Dissipation@ Ta=25°C  
Junction Temperature  
<4.5  
A
Ptot  
<10  
W
Ptot  
<1.2  
W
OC  
OC  
Tj  
<150  
Tstg  
Storage Temperature  
-65 to +150  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
TYP  
MAX  
UNIT  
µA  
ICBO  
IE =0, VCB =40V  
Collector-Cut off Current  
1.0  
µA  
IEBO  
VEB =4V, IC =0  
Emitter cut off Current  
Breakdown Voltages  
1.0  
VCEO IC =1mA, IB =0  
VCBO IC =50µA, IE =0  
50  
60  
5
V
V
V
V
V
IC =0, IE =50µA  
IC=2A, IB=0.2A  
*
VEBO  
VCE (sat)  
VBE (sat)  
Saturation Voltages  
1
*
1.5  
hFE*  
IC=0.5A,VCE=3V**  
IE =0, VCB =10V  
IC=0.5A, VCE=5V  
DC Current Gain  
56  
390  
CO  
fT*  
Output Capacitance at f=1MHz  
Transition Frequency  
50  
70  
pF  
MHz  
(1) Single Pulse PW = 100ms  
* Pulse test  
**hFE classification : N :56-120 Q:120-270 P: 82-180 R:180-390  
Continental Device India Limited  
Data Sheet  
Page 1 of 3  

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