Datasheet > CSB1058

CSB1058

更新时间： 2024-09-20 22:28:47

品牌	Logo	应用领域
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页数	文件大小	规格书
3页	61K
描述
NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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CSB1058 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

NPN EPITAXIAL PLANAR SILICON TRANSISTOR

CSD1489

TO-92

BCE

Low Frequency Power Amplifier.

Complementary CSB1058

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)

DESCRIPTION

SYMBOL

BVCBO

BVCEO

BVEBO

VALUE

UNIT

Collector -Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Current

6.0

2.0

Collector Power Dissipation

Operating And Storage Junction

Temperature Range

Tj, Tstg

0.75

-55 to +150

deg C

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

6.0

TYP

MAX

2.0

0.2

500

UNIT

Collector -Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

DC Current Gain

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE *

IC=10uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=16V, IE=0

VEB=6V, IC=0

VCE=2V, IC=0.1A

VCE=2V, IC=2A

100

Collector Emitter Saturation Voltage

Dynamic Characteristics

VCE(Sat) IC=1A, IB=0.1A

0.3

Transition Frequency

Collector Output Capacitance

Cob

VCE=2V, IC=10mA,

VCB=10V, IE=0

f=1MHz

MHz

hFE* Classification :

A 100-240;

B 200-400;

C 350-500

Continental Device India Limited

Page 1 of 3

Data Sheet

12 3

中文翻译

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CSB1058B	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 16V V(BR)CEO \| 2A I(C) \| TO-92
CSB1065	CDIL	获取价格	PNP PLASTIC POWER TRANSISTOR
CSB1065N	CDIL	获取价格	PNP PLASTIC POWER TRANSISTOR
CSB1065P	CDIL	获取价格	PNP PLASTIC POWER TRANSISTOR
CSB1065Q	CDIL	获取价格	PNP PLASTIC POWER TRANSISTOR
CSB1065R	CDIL	获取价格	PNP PLASTIC POWER TRANSISTOR
CSB1086	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 120V V(BR)CEO \| 1.5A I(C) \| TO-126
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