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CSA537B PDF预览

CSA537B

更新时间: 2024-11-09 23:43:59
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其他 - ETC /
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4页 191K
描述
BJT

CSA537B 数据手册

 浏览型号CSA537B的Datasheet PDF文件第2页浏览型号CSA537B的Datasheet PDF文件第3页浏览型号CSA537B的Datasheet PDF文件第4页 
IS/ISO 9002  
Lic# QSC/L-000019.3  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP SILICON PLANAR EPITAXIAL TRANSISTOR  
CSA537  
TO-39  
Metal Can Package  
MEDIUM SPEED SWITCHING AND LINEAR AMPLIFIER APPLICATIONS  
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)  
VALUE  
DESCRIPTION  
SYMBOL  
VCEO  
VCBO  
VEBO  
IC  
UNITS  
50  
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current Continuous  
Emitter Current Contiuuous  
Power Dissipation  
V
V
60  
5
0.7  
V
A
IE  
0.7  
A
PD  
0.75  
W
ºC  
ºC  
Tj  
200  
Junction Temperature  
Storage Temperature  
Tstg  
-55 To +200  
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
VALUE  
>60  
DESCRIPTION  
SYMBOL TEST CONDITION  
UNITS  
BVCBO  
IC=10mA, IE= 0  
Collector Base Breakdown Voltage  
Collector Emitter Breakdown Voltage  
Emitter Base Breakdown Voltage  
Collector Cutoff Current  
Emitter Cutoff Current  
V
V
BVCEO  
BVEBO  
ICBO  
IC=5mA, IE=0  
>50  
IE=10mA, IC=0  
>5  
V
VCB=30V, IE=0  
<50  
nA  
nA  
V
IEBO  
VEB=3V, IC=0  
<50  
VCE(Sat)  
VBE(Sat)  
hFE (1)  
hFE (2)  
| hfe |  
IC=150mA,IB=15mA  
IC=150mA,IB=15mA  
IC=50mA,VCE=4V  
<0.5  
<1.1  
50-160  
>20  
Collector Emitter(Sat) Voltage  
Base Emitter (Sat) Voltage  
DC Current Gain  
V
IC=400mA,VCE=4V  
IC=20mA, VCE=10V,  
f=100MHz  
>1.0  
Small Signal Current Gain  
Output Capacitance  
V
V
pF  
Cob  
VCB=10V, IE=0, f=1MHz  
<35  
Continental Device India Limited  
Data Sheet  
Page 1 of 4  

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