Datasheet > CRSY030N04L2Q

CRSY030N04L2Q

更新时间： 2024-04-09 19:03:14

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1429K
描述
LFPAK5×6

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中文翻译

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数据手册

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CRSY030N04L2Q 数据手册

CRSY030N04L2Q

华润微电子(重庆)有限公司

SkyMOS2 N-MOSFET 40V, 1.7mΩ, 140A

Features

Product Summary

V_DS

40V

• Uses CRM(CQ) advanced SkyMOS2 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• AEC-Q101 Qualified

R_DS(on).typ

I_D

1.7mΩ

140A

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

CRSY030N04L2Q

Package Marking and Ordering Information

Part #

Marking

Package

Packing

Reel Size

Tape Width

N/A

Qty

CRSY030N04L2Q

LFPAK5*6 Tape&reel

N/A

4000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 100°C (Silicon limit)

I_D

140

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 32A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

560

153

V_GS

Gate-Source voltage

±20

Power dissipation (T_C= 25°C)

P_tot

124

°C

T_j, T _stg

Operating junction and storage temperature

-55...+175

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

Tsold

260

°C

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.3mH, IAS =32A, VGS = 10V.

Rev 1.1

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...10

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