Datasheet > CRSZ025N10NZ

CRSZ025N10NZ

更新时间： 2024-09-26 17:02:07

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
9页	1348K
描述
TOLL

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中文翻译

获取价格

数据手册

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CRSZ025N10NZ 数据手册

CRSZ025N10NZ

SkyMOS1 N-MOSFET 100V, 2mΩ, 240A

华润微电子(重庆)有限公司

Features

Product Summary

V_DS

100V

2mΩ

240A

• Uses CRM(CQ) advanced SkyMOS1 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on)

I_D

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Battery management

• UPS (Uninterrupible Power Supplies)

CRSZ025N10NZ

Package Marking and Ordering Information

Part #

Marking

Package

TOLL

Reel Size

Tape Width

N/A

Qty

Packing

Tape

CRSZ025N10NZ

N/A

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

100

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

264

240

155

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

960

529

Avalanche energy, single pulse (L=0.5mH, Rg=25Ω)^[1]

Gate-Source voltage

V_GS

±20

Power dissipation (T_C= 25°C)

P_tot

272

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Notes:1.EAS was tested at Tj = 25℃, ID = 46A.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

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