Datasheet > CRSZ096N20N3Z

CRSZ096N20N3Z

更新时间： 2024-10-15 18:09:23

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1140K
描述
TOLL

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中文翻译

获取价格

数据手册

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CRSZ096N20N3Z 数据手册

CRSZ096N20N3Z

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 200V, 8mΩ, 125A

Features

Product Summary

V_DS

200V

8mΩ

125A

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on).typ

I_D

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRSZ096N20N3Z

Package Marking and Ordering Information

Part #

Marking

Package

TOLL

Packing

Reel Size Tape Width

Qty

CRSZ096N20N3Z CRSZ096N20N3Z

Tape&Reel

N/A

2000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

200

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

125

300

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 68A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

500

1145

±20

V_GS

Gate-Source voltage

Power dissipation (T_C= 25°C)

P_tot

272

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =68A, VGS = 10V.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

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