Datasheet > CRSZ038N14N3Z

CRSZ038N14N3Z

更新时间： 2024-04-09 18:59:55

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1160K
描述
TOLL

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中文翻译

获取价格

数据手册

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CRSZ038N14N3Z 数据手册

CRSZ038N14N3Z

华润微电子(重庆)有限公司

SkyMOS3 N-MOSFET 135V, 2.9mΩ, 190A

Features

Product Summary

V_DS

135V

• Uses CRM(CQ) advanced SkyMOS3 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

R_DS(on).typ

I_D

2.9mΩ

190A

• Qualified according to JEDEC criteria

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRSZ038N14N3Z

Package Marking and Ordering Information

Part #

Marking

Package

TOLL

Packing

Reel Size Tape Width

Qty

CRSZ038N14N3Z CRSZ038N14N3Z

Tape&Reel

N/A

2000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

135

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

190

300

121

760

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

)

I_{D pulse}

E_AS

Avalanche energy, single pulse (ID = 76A, Rg=25Ω)^[1]

Gate-Source voltage

1445

±20

V_GS

Power dissipation (T_C= 25°C)

P_tot

266

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =76A, VGS = 10V.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

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中文翻译

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