Datasheet > CRSZ012N04L2Z-G

CRSZ012N04L2Z-G

更新时间： 2024-03-03 10:10:43

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1030K
描述
TOLL

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中文翻译

获取价格

数据手册

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CRSZ012N04L2Z-G 数据手册

CRSZ012N04L2Z-G

Trench N-MOSFET 40V, 1mΩ, 300A

Features

Product Summary

V_DS

40V

• Uses CRM advanced Trench technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_{DS(on) typ.}

I_D

1mΩ

300A

(Silicon limit)

100% DVDS Tested

Applications

100% Avalanche Tested

• Motor control and drive

• Electrical tools

• Lithium battery protection

Package Marking and Ordering Information

Part #

Marking

Package

TOLL

Reel Size

Tape Width

N/A

Qty

Packing

Reel

CRSZ012N04L2Z-G

SZ012N04L2Z

N/A

2000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)^a1

T_C= 25°C (Package limit)^a1

T_C= 100°C (Silicon limit)

300

200

191

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (L=0.5mH)

Gate-Source voltage

)

I_{D pulse}

E_AS

800

756

V_GS

±18

Power dissipation (T_C= 25°C)

P_tot

174.8

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

Soldering temperature, wave soldering only allowed at leads

(1.6mm from case for 10s)

T_sold

260

°C

Ver. 2.0

©WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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