Datasheet > CRSZ016N10N4Z

CRSZ016N10N4Z

更新时间： 2024-04-09 19:03:13

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1068K
描述
TOLL

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数据手册

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CRSZ016N10N4Z 数据手册

CRSZ016N10N4Z

华润微电子(重庆)有限公司

SkyMOS4 N-MOSFET 100V, 1.26mΩ, 320A

Features

Product Summary

V_DS

100V

• Uses CRM(CQ) advanced SkyMOS4 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• Qualified according to JEDEC criteria

R_DS(on).typ

I_D

1.26mΩ

320A

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

• UPS (Uninterrupible Power Supplies)

CRSZ016N10N4Z

Package Marking and Ordering Information

Part #

Marking

Package

TOLL

Packing

Reel Size Tape Width

Qty

CRSZ016N10N4Z

SZ016N10N4Z

Tape&Reel

N/A

2000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

100

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 25°C (Package limit)

T_C= 100°C (Silicon limit)

320

370

I_D

205

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (ID = 88A, Rg=25Ω)^[1]

)

I_{D pulse}

E_AS

1280

1921

±20

V_GS

Gate-Source voltage

Power dissipation (T_C= 25°C)

P_tot

293

°C

T_j, T _stg

Operating junction and storage temperature

-55...+150

※. Notes:

1.EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS =88A, VGS = 10V.

2.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low

frequency and duty cycles to keep initial TJ =25°C.

Rev 1.0

©China Resources Microelectronics (Chongqing) Limited

Page 1

12 3 4 5 6 7...10

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