CRSY045N06L2Q
SkyMOS2 N-MOSFET 60V, 4.5mΩ, 90A
华润微电子(重庆)有限公司
Features
Product Summary
VDS
60V
• Uses CRM(CQ) advanced SkyMOS2 technology
• Extremely low on-resistance RDS(on)
• Excellent QgxRDS(on) product(FOM)
• AEC-Q101 Qualified
RDS(on)@10V typ
ID
4.5mΩ
90A
100% DVDS Tested
Applications
• Motor control and drive
• Battery management
• UPS (Uninterrupible Power Supplies)
100% Avalanche Tested
CRSY045N06L2Q
Package Marking and Ordering Information
Part #
Marking
Package
Reel Size
N/A
Tape Width
N/A
Qty
Packing
CRSY045N06L2Q
045N06L2Q
LFPAK5*6
Tape&reel
4000pcs
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
VDS
Drain-source voltage
60
V
Continuous drain current
TC = 25°C (Silicon limit)
TC = 100°C (Silicon limit)
ID
A
90
66
Pulsed drain current (TC = 25°C, tp limited by Tjmax
)
ID pulse
EAS
372
109
A
mJ
V
Avalanche energy, single pulse (L=0.3mH, Rg=25Ω)[1]
Gate-Source voltage
VGS
±20
Power dissipation (TC = 25°C)
Ptot
94
W
°C
Tj , T stg
Operating junction and storage temperature
-55...+175
Soldering temperature, wave soldering only allowed at leads
(1.6mm from case for 10s)
Tsold
260
°C
Notes:1.EAS was tested at Tj = 25℃, L = 0.3mH, IAS = 27A, Vgs=10V.
Thermal Resistance
Parameter
Symbol
Max
1.6
48
Unit
RthJC
RthJA
Thermal resistance, junction – case.
Thermal resistance, junction – ambient(min. footprint)
Thermal resistance, junction – plastic case
°C/W
Rthj-pc
17
Rev 1.0
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