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CRSY045N06L2Q PDF预览

CRSY045N06L2Q

更新时间: 2024-04-09 19:00:38
品牌 Logo 应用领域
华润微 - CRMICRO /
页数 文件大小 规格书
7页 1567K
描述
LFPAK5x6

CRSY045N06L2Q 数据手册

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CRSY045N06L2Q  
SkyMOS2 N-MOSFET 60V, 4.5mΩ, 90A  
华润微电子(重庆)有限公司  
Features  
Product Summary  
VDS  
60V  
• Uses CRM(CQ) advanced SkyMOS2 technology  
• Extremely low on-resistance RDS(on)  
• Excellent QgxRDS(on) product(FOM)  
• AEC-Q101 Qualified  
RDS(on)@10V typ  
ID  
4.5mΩ  
90A  
100% DVDS Tested  
Applications  
• Motor control and drive  
• Battery management  
• UPS (Uninterrupible Power Supplies)  
100% Avalanche Tested  
CRSY045N06L2Q  
Package Marking and Ordering Information  
Part #  
Marking  
Package  
Reel Size  
N/A  
Tape Width  
N/A  
Qty  
Packing  
CRSY045N06L2Q  
045N06L2Q  
LFPAK5*6  
Tape&reel  
4000pcs  
Absolute Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
VDS  
Drain-source voltage  
60  
V
Continuous drain current  
TC = 25°C (Silicon limit)  
TC = 100°C (Silicon limit)  
ID  
A
90  
66  
Pulsed drain current (TC = 25°C, tp limited by Tjmax  
)
ID pulse  
EAS  
372  
109  
A
mJ  
V
Avalanche energy, single pulse (L=0.3mH, Rg=25)[1]  
Gate-Source voltage  
VGS  
±20  
Power dissipation (TC = 25°C)  
Ptot  
94  
W
°C  
Tj , T stg  
Operating junction and storage temperature  
-55...+175  
Soldering temperature, wave soldering only allowed at leads  
(1.6mm from case for 10s)  
Tsold  
260  
°C  
Notes:1.EAS was tested at Tj = 25, L = 0.3mH, IAS = 27A, Vgs=10V.  
Thermal Resistance  
Parameter  
Symbol  
Max  
1.6  
48  
Unit  
RthJC  
RthJA  
Thermal resistance, junction – case.  
Thermal resistance, junction – ambient(min. footprint)  
Thermal resistance, junction – plastic case  
°C/W  
Rthj-pc  
17  
Rev 1.0  
©China Resources Microelectronics (Chongqing) Limited  
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