Datasheet > CRSY035N04N2Z

CRSY035N04N2Z

更新时间： 2024-03-03 10:10:04

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	1427K
描述
LFPAK5×6

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中文翻译

获取价格

数据手册

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CRSY035N04N2Z 数据手册

CRSY035N04N2Z

华润微电子(重庆)有限公司

SkyMOS2 N-MOSFET 40V, 3.4mΩ, 90A

Features

Product Summary

V_DS

40V

• Uses CRM(CQ) advanced SkyMOS2 technology

• Extremely low on-resistance R_DS(on)

• Excellent Q_gxR_DS(on)product(FOM)

• AEC-Q101 Qualified

R_DS(on).typ

I_D

3.4mΩ

90A

100% DVDS Tested

100% Avalanche Tested

Applications

• Motor control and drive

• Battery management System

CRSY035N04N2Z

Package Marking and Ordering Information

Part #

Marking

Package

Packing

Reel Size Tape Width

Qty

CRSY035N04N2Z

LFPAK5*6

Tape&reel

N/A

4000pcs

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

V_DS

Drain-source voltage

Continuous drain current

T_C= 25°C (Silicon limit)

T_C= 100°C (Silicon limit)

I_D

Pulsed drain current (T_C= 25°C, t_plimited by T_jmax

Avalanche energy, single pulse (IAS = 26A, Rg=50Ω)^[1]

)

I_{D pulse}

E_AS

360

100

V_GS

Gate-Source voltage

±20

Power dissipation (T_C= 25°C)

P_tot

°C

T_j, T _stg

Operating junction and storage temperature

-55...+175

Soldering temperature, wave soldering only allowed at leads (1.6mm

from case for 10s)

Tsold

260

°C

※. Notes:

EAS is tested at starting Tj = 25℃, L = 0.3mH, IAS =26A, VGS = 10V.

Rev1.0

©China Resources Microelectronics (Chongqing) Limited

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