CPC3730C
N-Channel Depletion-Mode
Vertical DMOS FETs
Description
BVDSX
BVDGX
350V
/
RDS(ON)
(max)
30Ω
IDSS (min)
Package
The CPC3730C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3730C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
140mA
SOT-89
Features
• Depletion mode device offers low RDS(ON) at cold
temperatures
• Low on resistance 30 ohms max. at 25ºC
• High input impedance
• High breakdown voltage 350V
• Low VGS(off) voltage -1.6 to -3.9V
• Small package size SOT-89
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3730C offers a low 30 ohm maximum
on-state resistance at 25ºC.
Applications
• Ignition modules
• Normally-on switches
• Solid state relays
• Converters
The CPC3730C has a minimum breakdown voltage of
350V and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
• Telecommunications
• Power supply
Ordering Information
Part #
CPC3730C
CPC3730CTR
Description
SOT-89 (100/Tube)
SOT-89 (2000/Reel)
Package Pinout
D
G
D
S
(SOT-89)
Switching Waveform
Test Circuit
VDD
RL
0V
90%
PULSE
GENERATOR
INPUT
OUTPUT
10%
-10V
Rgen
t(ON)
td(ON)
t(OFF)
td(OFF)
tr
tF
D.U.T.
VDD
0V
INPUT
10%
10%
OUTPUT
90%
90%
DS-CPC3730C-R00B.2
1
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