5秒后页面跳转
CPC3730CTR PDF预览

CPC3730CTR

更新时间: 2024-11-05 06:48:27
品牌 Logo 应用领域
CLARE 晶体晶体管开关脉冲
页数 文件大小 规格书
4页 390K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

CPC3730CTR 数据手册

 浏览型号CPC3730CTR的Datasheet PDF文件第2页浏览型号CPC3730CTR的Datasheet PDF文件第3页浏览型号CPC3730CTR的Datasheet PDF文件第4页 
CPC3730C  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Description  
BVDSX  
BVDGX  
350V  
/
RDS(ON)  
(max)  
30  
IDSS (min)  
Package  
The CPC3730C is an N-channel depletion mode field  
effect transistor (FET) that utilizes Clare’s proprietary  
third generation vertical DMOS process. Third  
generation process realizes world class, high voltage  
MOSFET performance in an economical silicon gate  
process. Our vertical DMOS process yields a robust  
device for high power applications with high input  
impedance. The CPC3730C is a highly reliable FET  
device that has been used extensively in Clare’s solid  
state relays for industrial and telecommunications  
applications.  
140mA  
SOT-89  
Features  
Depletion mode device offers low RDS(ON) at cold  
temperatures  
Low on resistance 30 ohms max. at 25ºC  
High input impedance  
High breakdown voltage 350V  
Low VGS(off) voltage -1.6 to -3.9V  
Small package size SOT-89  
This device excels in power applications requiring  
low drain-source resistance, particularly in cold  
environments such as automotive ignition modules.  
The CPC3730C offers a low 30 ohm maximum  
on-state resistance at 25ºC.  
Applications  
Ignition modules  
Normally-on switches  
Solid state relays  
Converters  
The CPC3730C has a minimum breakdown voltage of  
350V and is available in an SOT-89 package. As with  
all MOS devices, the FET structure prevents thermal  
runaway and thermal-induced secondary breakdown.  
Telecommunications  
Power supply  
Ordering Information  
Part #  
CPC3730C  
CPC3730CTR  
Description  
SOT-89 (100/Tube)  
SOT-89 (2000/Reel)  
Package Pinout  
D
G
D
S
(SOT-89)  
Switching Waveform  
Test Circuit  
VDD  
RL  
0V  
90%  
PULSE  
GENERATOR  
INPUT  
OUTPUT  
10%  
-10V  
Rgen  
t(ON)  
td(ON)  
t(OFF)  
td(OFF)  
tr  
tF  
D.U.T.  
VDD  
0V  
INPUT  
10%  
10%  
OUTPUT  
90%  
90%  
DS-CPC3730C-R00B.2  
1
www.clare.com  

与CPC3730CTR相关器件

型号 品牌 获取价格 描述 数据表
CPC3902 IXYS

获取价格

Depletion-Mode FET
CPC3902 LITTELFUSE

获取价格

我们的N沟道耗尽型场效应晶体管(FET)采用专有的第三代垂直DMOS工艺。 第三代工艺在经
CPC3902C IXYS

获取价格

Depletion-Mode FET
CPC3902CTR IXYS

获取价格

Small Signal Field-Effect Transistor,
CPC3902Z IXYS

获取价格

Depletion-Mode FET
CPC3902ZTR IXYS

获取价格

Depletion-Mode FET
CPC3909 IXYS

获取价格

Depletion-Mode FET
CPC3909 LITTELFUSE

获取价格

我们的N沟道耗尽型场效应晶体管(FET)采用专有的第三代垂直DMOS工艺。 第三代工艺在经
CPC3909C IXYS

获取价格

Depletion-Mode FET
CPC3909CTR IXYS

获取价格

Depletion-Mode FET