Datasheet > CPC3982T

CPC3982T

更新时间： 2024-11-19 01:18:07

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	122K
描述
N-Channel Depletion-Mode

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CPC3982T 数据手册

CPC3982

N-Channel Depletion-Mode

Vertical DMOS FET

INTEGRATED

CIRCUITS

DIVISION

PRELIMINARY

Description

V_(BR)DSX

V_(BR)DGX

R_DS(on)

(max)

I_DSS(min)

Package

The CPC3982 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes IXYS Integrated

Circuits Division’s proprietary third-generation vertical

DMOS process. The third-generation process realizes

world class, high voltage MOSFET performance

in an economical silicon gate process. Our vertical

DMOS process yields a robust device, with high

input impedance, for use in high-power applications.

The CPC3982 is a highly reliable device that has

been used extensively in our Solid State Relays for

industrial and telecommunications applications.

800V

380

20mA

SOT-23

Features

• High Breakdown Voltage: 800V

• Low V_GS(off)Voltage: -1.4V to -3.1V

• Depletion Mode Device Offers Low R_DS(on)

at Cold Temperatures

• High Input Impedance

• Small Package Size: SOT-23

This device excels in power applications that require

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

Applications

• Constant Current Regulator

• Ignition Modules

The CPC3982 has a minimum breakdown voltage of

800V, and is available in an SOT-23 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

• Normally-On Switches

• Solid State Relays

• Converters

• Telecommunications

• Power Supply

Ordering Information

Part #

CPC3982TTR

Description

N-Channel Depletion Mode FET, SOT-23 Pkg.

Tape and Reel (3000/Reel)

Package Pinout

Circuit Symbol

(SOT-23)

DS-CPC3982-R00D

PRELIMINARY

12 3 4 5

中文翻译

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